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SHD246004S PDF预览

SHD246004S

更新时间: 2024-11-20 21:17:31
品牌 Logo 应用领域
SENSITRON 开关脉冲晶体管
页数 文件大小 规格书
2页 32K
描述
Power Field-Effect Transistor, 0.2A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-4

SHD246004S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:SMALL OUTLINE, R-CDSO-N4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.2 A最大漏源导通电阻:2.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CDSO-N4
JESD-609代码:e0元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):3 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SHD246004S 数据手册

 浏览型号SHD246004S的Datasheet PDF文件第2页 
SENSITRON  
SEMICONDUCTOR  
SHD246004  
TECHNICAL DATA  
DATA SHEET 644, REV. A  
HERMETIC POWER MOSFET  
N-CHANNEL  
SHD246004S -- S-100 (JANTX) Screening  
FEATURES:  
œ
œ
œ
œ
60 Volt, 2.5 Ohm, 0.2 A MOSFET  
Isolated Hermetic, Ceramic Package  
Fast Switching  
Low RDS (on)  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.  
RATING  
DRAIN TO SOURCE VOLTAGE  
GATE TO SOURCE VOLTAGE  
ON-STATE DRAIN CURRENT @ TC = 25•C  
PULSED DRAIN CURRENT @ TC = 25•C  
OPERATING AND STORAGE TEMPERATURE  
SYMBOL  
VDS  
MIN.  
-
-
-
-
-55  
-
TYP.  
MAX.  
60  
–20  
0.2  
UNITS  
Volts  
Volts  
Amps  
Amps  
•C  
-
-
-
-
-
-
-
VGS  
ID (on)  
IDM  
TOP/TSTG  
PD  
RthJC  
3.0  
+150  
1250  
98  
mW  
•C/W  
TOTAL DEVICE DISSIPATION @ TC = 25•C  
THERMAL RESISTANCE, JUNCTION TO CASE  
-
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
ID(on)  
60  
1.0  
-
-
-
-
-
-
Volts  
Amp  
VGS = 0V, ID = 1.0 mA  
VDS = 25V, VGS = 10V  
ON-STATE DRAIN CURRENT  
Pulse width = 300ms, Duty cycle ˆ 2%  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
RDS(ON)  
2.5  
5.0  
3.0  
-
Pulse width = 300ms,  
Duty cycle ˆ 2%  
GATE THRESHOLD VOLTAGE  
VGS = 10V, ID = 500mA  
VGS = 5V, ID = 200mA  
VDS = VGS, ID = 1mA  
W
VGS(th)  
gfs  
1.3  
150  
-
-
Volts  
S(1/W)  
FORWARD TRANSCONDUCTANCE  
VDS = 25V, ID = 250A  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 60V, VGS = 0V  
VDS = 48V, VGS = 0V, TJ = 125•C  
-
-
-
-
-
-
IDSS  
IGSS  
10  
50  
100  
-100  
mA  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
VGS = 20V  
VGS = -20V  
VDS = 0V  
VDD = 25V,  
ID = 150mA,  
nA  
TURN ON DELAY TIME  
RISE TIME  
TURN OFF DELAY TIME  
FALL TIME  
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
td(ON)  
tr  
td(OFF)  
tf  
Ciss  
Coss  
Crss  
5.0  
7.0  
6.0  
8.0  
-
nsec  
pF  
VGS = 0 V,  
VDS = 25 V,  
f = 1.0MHz  
-
35  
25  
8.0  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com  

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