Datasheet > SHD246004

SHD246004

更新时间： 2024-09-22 09:17:19

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	32K
描述
Power Field-Effect Transistor, 0.2A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-4

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SHD246004 数据手册

SENSITRON

SEMICONDUCTOR

SHD246004

TECHNICAL DATA

DATA SHEET 644, REV. A

HERMETIC POWER MOSFET

N-CHANNEL

SHD246004S -- S-100 (JANTX) Screening

FEATURES:

60 Volt, 2.5 Ohm, 0.2 A MOSFET

Isolated Hermetic, Ceramic Package

Fast Switching

Low R_{DS (on)}

MAXIMUM RATINGS

ALL RATINGS ARE AT T_C= 25C UNLESS OTHERWISE SPECIFIED.

RATING

DRAIN TO SOURCE VOLTAGE

GATE TO SOURCE VOLTAGE

ON-STATE DRAIN CURRENT @ T_C= 25C

PULSED DRAIN CURRENT @ T_C= 25C

OPERATING AND STORAGE TEMPERATURE

SYMBOL

V_DS

MIN.

-55

TYP.

MAX.

0.2

UNITS

Volts

Amps

V_GS

I_{D (on)}

I_DM

T_OP/T_STG

P_D

R_thJC

3.0

+150

1250

C/W

TOTAL DEVICE DISSIPATION @ T_C= 25C

THERMAL RESISTANCE, JUNCTION TO CASE

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

I_D(on)

1.0

Volts

Amp

V_GS= 0V, I_D= 1.0 mA

V_DS= 25V, V_GS= 10V

ON-STATE DRAIN CURRENT

Pulse width = 300ms, Duty cycle 2%

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

R_DS(ON)

2.5

5.0

3.0

Pulse width = 300ms,

Duty cycle 2%

GATE THRESHOLD VOLTAGE

V_GS= 10V, I_D= 500mA

V_GS= 5V, I_D= 200mA

V_DS= V_GS, I_D= 1mA

V_GS(th)

g_fs

1.3

150

Volts

S(1/W)

FORWARD TRANSCONDUCTANCE

V_DS= 25V, I_D= 250A

ZERO GATE VOLTAGE DRAIN CURRENT

V_DS= 60V, V_GS= 0V

V_DS= 48V, V_GS= 0V, T_J= 125C

I_DSS

I_GSS

100

-100

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

V_GS= 20V

V_GS= -20V

V_DS= 0V

V_DD= 25V,

I_D= 150mA,

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

t_d(ON)

t_r

t_d(OFF)

t_f

C_iss

C_oss

C_rss

5.0

7.0

6.0

8.0

nsec

V_GS= 0 V,

V_DS= 25 V,

f = 1.0MHz

8.0

221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798

World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com

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与SHD246004相关器件

型号	品牌	获取价格	描述	数据表
SHD246004S	SENSITRON	获取价格	Power Field-Effect Transistor, 0.2A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Meta
SHD246006S	SENSITRON	获取价格	Power Field-Effect Transistor, 0.25A I(D), 60V, 3ohm, 1-Element, N-Channel, Silicon, Metal
SHD246723	SENSITRON	获取价格	HERMETIC POWER MOSFET N-CHANNEL
SHD246723S	SENSITRON	获取价格	Power Field-Effect Transistor, 0.3A I(D), 60V, 1.6ohm, 1-Element, N-Channel, Silicon, Meta
SHD248201	SENSITRON	获取价格	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
SHD248302	SENSITRON	获取价格	Power Field-Effect Transistor, 10.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M
SHD248305	SENSITRON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
SHD248704	SENSITRON	获取价格	Power Field-Effect Transistor, 5A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta
SHD258624	SENSITRON	获取价格	Power Field-Effect Transistor, 44A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
SHD274002	SENSITRON	获取价格	Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 4-Element, N-Channel, Silicon, Meta

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