是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, S-CQCC-N28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 6.2 A |
最大漏源导通电阻: | 0.35 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-CQCC-N28 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 28 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 12 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SHD230209 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET P-CHANNEL QUAD | |
SHD2303 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Me | |
SHD230302 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET N-CHANNEL | |
SHD230303 | SENSITRON |
获取价格 |
DUAL HERMETIC POWER MOSFET N-CHANNEL | |
SHD2304 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 400V, 0.32ohm, 1-Element, N-Channel, Silicon, Met | |
SHD230405 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET N-CHANNEL | |
SHD230409 | SENSITRON |
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HERMETIC POWER MOSFET P-CHANNEL | |
SHD230410 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 8.5A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me | |
SHD230452 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET P-CHANNEL | |
SHD2305 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 500V, 0.42ohm, 1-Element, N-Channel, Silicon, Met |