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SHD230202 PDF预览

SHD230202

更新时间: 2024-10-14 09:26:39
品牌 Logo 应用领域
SENSITRON /
页数 文件大小 规格书
3页 62K
描述
HERMETIC POWER MOSFET N-CHANNEL QUAD

SHD230202 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:LCC
包装说明:CHIP CARRIER, S-CQCC-N28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):6.2 A
最大漏源导通电阻:0.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-CQCC-N28JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:28工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SHD230202 数据手册

 浏览型号SHD230202的Datasheet PDF文件第2页浏览型号SHD230202的Datasheet PDF文件第3页 
SENSITRON  
SEMICONDUCTOR  
SHD230202  
TECHNICAL DATA  
DATA SHEET 319, REV. A  
HERMETIC POWER MOSFET  
N-CHANNEL QUAD  
FEATURES:  
œ
œ
œ
œ
100 Volt, 0.35 Ohm, 6.2A MOSFET  
Fast Switching  
Low RDS (on)  
Equivalent to IRF120 Series  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.  
RATING  
GATE TO SOURCE VOLTAGE  
ON-STATE DRAIN CURRENT @ TC = 25•C  
PULSED DRAIN CURRENT (10ms)  
OPERATING AND STORAGE TEMPERATURE  
SYMBOL  
VGS  
ID  
IDM  
TOP/TSTG  
MIN.  
-
-
-
-55  
-
TYP.  
MAX.  
–20  
6.2  
12  
+150  
27  
4.7  
UNITS  
Volts  
Amps  
Amps  
•C  
Watts  
•C/W  
-
-
-
-
-
-
PD  
RthJC  
TOTAL DEVICE DISSIPATION @ TC = 25•C  
THERMAL RESISTANCE, JUNCTION TO CASE  
-
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
SYMBOL  
BVDSS  
MIN.  
100  
TYP.  
-
MAX.  
UNITS  
Volts  
-
VGS = 0V, ID = 250mA  
STATIC DRAIN TO SOURCE ON STATE RESISTANCE  
RDS(ON)  
-
-
0.35  
W
VGS = 10V, ID = 0.6x rated ID  
VGS(th)  
gfs  
2.0  
2.7  
-
4.0  
-
Volts  
S(1/W)  
GATE THRESHOLD VOLTAGE  
FORWARD TRANSCONDUCTANCE  
VDS ˜ ID (ON) X RDS (ON) Max., IDS = 0.6 X ID  
VDS = VGS, ID = 250mA  
4.1  
ZERO GATE VOLTAGE DRAIN CURRENT  
-
-
VDS = Max. Rating, VGS = 0V  
IDSS  
IGSS  
250  
mA  
1000  
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125•C  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
TURN ON DELAY TIME  
RISE TIME  
TURN OFF DELAY TIME  
FALL TIME  
VGS = 20V  
VGS = -20V  
VDD = 50V,  
ID = .5xID,  
RG = 18W,  
VGS = 10V  
-
-
-
100  
-100  
13  
nA  
td(ON)  
8.8  
30  
19  
20  
tr  
td(OFF)  
tf  
45  
nsec  
Volts  
nsec  
pF  
29  
30  
VSD  
-
-
2.5  
DIODE FORWARD VOLTAGE  
REVERSE RECOVERY TIME  
TC = 25•C, IS = ID,  
VGS = 0V  
trr  
55  
110  
240  
TJ = 25•C,  
If = ID,  
diF/ds = 100A/msec,  
VGS = 0 V  
INPUT CAPACITANCE  
Ciss  
Coss  
Crss  
-
350  
130  
36  
-
OUTPUT CAPACITANCE  
VDS = 25 V  
f = 1.0MHz  
REVERSE TRANSFER CAPACITANCE  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798  
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com  

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