是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, S-CQCC-N28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 8.5 A |
最大漏源导通电阻: | 0.52 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-CQCC-N28 | 元件数量: | 1 |
端子数量: | 28 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SHD230452 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET P-CHANNEL | |
SHD2305 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 500V, 0.42ohm, 1-Element, N-Channel, Silicon, Met | |
SHD2306 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 6.4A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
SHD2307 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Met | |
SHD230704 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET N-CHANNEL QUAD | |
SHD2308 | SENSITRON |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal- | |
SHD231006 | SENSITRON |
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HERMETIC POWER MOSFET N-CHANNEL | |
SHD231006_10 | SENSITRON |
获取价格 |
HERMETIC POWER MOSFET N-CHANNEL | |
SHD231008 | SENSITRON |
获取价格 |
HERMETIC DEPLETION MODE DMOS N-CHANNEL | |
SHD231009 | SENSITRON |
获取价格 |
HERMETIC P-CHANNEL JFET |