Datasheet > SHD231006_10

SHD231006_10

更新时间： 2024-09-21 09:26:39

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	33K
描述
HERMETIC POWER MOSFET N-CHANNEL

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数据手册

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SHD231006_10 数据手册

SENSITRON

SEMICONDUCTOR

SHD231006

TECHNICAL DATA

DATA SHEET 4322, REV. A

HERMETIC POWER MOSFET

N-CHANNEL

SHD231006S -- S-100 (JANTX level room temp) Screening per Sensitron datasheet

FEATURES:

•

60 Volt, 3.0 Ohm, 0.25 A MOSFET

Isolated Hermetic, Ceramic Package

Fast Switching

Low R_{DS (on)}

MAXIMUM RATINGS

ALL RATINGS ARE AT T_C= 25°C UNLESS OTHERWISE SPECIFIED.

RATING

DRAIN TO SOURCE VOLTAGE

GATE TO SOURCE VOLTAGE

SYMBOL

V_DS

MIN.

-55

TYP.

MAX.

±20

0.25

1.3

+150

2.5

UNITS

Volts

Amps

°C

V_GS

I_{D (on)}

I_DM

T_OP/T_STG

P_D

R_thJC

ON-STATE DRAIN CURRENT @ T_C= 25°C

PULSED DRAIN CURRENT @ T_C= 25°C

OPERATING AND STORAGE TEMPERATURE

TOTAL DEVICE DISSIPATION @ T_C= 25°C

THERMAL RESISTANCE, JUNCTION TO CASE

°C/W

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

I_D(on)

0.8

Volts

Amp

V_GS= 0V, I_D= 10μA

ON-STATE DRAIN CURRENT

V_DS= 7.5V, V_GS= 10V

Pulse width = 300μs, Duty cycle ≤ 2%

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

R_DS(ON)

3.0

4.0

Pulse width = 300μs,

Duty cycle ≤ 2%

GATE THRESHOLD VOLTAGE

V_GS= 10V, I_D= 500mA

V_GS= 5V, I_D= 200mA

V_DS= V_GS, I_D= 250μA

V_GS(th)

g_fs

1.0

2.5

Volts

FORWARD TRANSCONDUCTANCE

250

S(1/Ω)

V_DS= 15V, I_D= 200mA

ZERO GATE VOLTAGE DRAIN CURRENT

V_DS= 60V, V_GS= 0V

I_DSS

I_GSS

500

-1

μA

V_DS= 60V, V_GS= 0V, T_C= 125°C

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

V_GS= 15V

_GS= -15V

_DS= 0V

TOTAL GATE CHARGE

GATE-SOURCE CHARGE

GATE-DRAIN CHARGE

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

V_DS= 30V,

V_GS= 10V,

I_D= 250mA

V_DD= 25V,

I_D= 150mA,

Q_g

Q_gs

Q_gd

t_d(ON)

t_r

t_d(OFF)

t_f

C_iss

C_oss

C_rss

0.4

0.06

7.5

6.0

7.5

3.0

0.6

nsec

V_GS= 0 V,

_DS= 25 V,

6.0

1.2

f = 1.0MHz

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