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SHD231008 PDF预览

SHD231008

更新时间: 2024-11-17 06:11:31
品牌 Logo 应用领域
SENSITRON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
2页 162K
描述
HERMETIC DEPLETION MODE DMOS N-CHANNEL

SHD231008 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DLCC
包装说明:SMALL OUTLINE, R-CDSO-N3针数:3
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏源导通电阻:6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CDSO-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):1 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SHD231008 数据手册

 浏览型号SHD231008的Datasheet PDF文件第2页 
SHD231008  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4302, REV -  
HERMETIC DEPLETION MODE DMOS  
N-CHANNEL  
FEATURES: 250 V, 6 , 300 mA DMOS N-Channel FET  
Hermetically Sealed  
Surface Mount Package: Ceramic LCC-3  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.  
RATING  
SYMBOL  
VGS  
MIN.  
-
-
TYP.  
-
-
MAX.  
±20  
300  
UNITS  
V
mA  
GATE TO SOURCE VOLTAGE  
SATURATED DRAIN SOURCE CURRENT VGS = 0V,  
VDS = 15V TC = 25°C  
IDSS  
IDM  
TOP/TSTG  
RθJC  
-
-55  
-
-
-
-
-
1000  
+150  
15  
mA  
PULSED DRAIN CURRENT  
OPERATING AND STORAGE TEMPERATURE  
TERMAL RESISTANCE JUNCTION TO CASE  
@ TC = 25°C  
°C  
°C/W  
W
PD  
-
1.6  
TOTAL DEVICE DISSIPATION @ TC = 25°C  
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSX  
BVDGX  
250  
250  
-
-
-
-
V
V
VGS = -5V, ID = 100 µA  
DRAIN TO GATE BREAKDOWN VOLTAGE  
VGS = -5V, ID = 100 µA  
DRAIN TO SOURCE ON STATE RESISTANCE  
VGS = 0V, ID = 200 mA  
RDS(ON)  
VGS(OFF)  
gfs  
-
-
-
-
6
-3.5  
-
GATE SOURCE OFF VOLTAGE VDS = 15V, ID = 1 mA  
FORWARD TRANSCONDUCTANCE  
-1.5  
225  
V
S(1/)  
V
DS = 10V, ID = 150 mA  
DRAIN SOURCE LEAKAGE CURRENT,  
DS = 0.8 x Max Rating, VGS = -5V  
ID(OFF)  
-
-
V
1
1
TJ = 25°C  
TJ = 125°C  
µA  
mA  
GATE TO SOURCE LEAKAGE FORWARD  
GATE TO SOURCE LEAKAGE REVERSE  
TURN ON DELAY TIME  
RISE TIME  
VGS = 20V  
GS = -20V  
VDD = 25V,  
ID = 150 mA,  
RG = 25,  
IGSS  
-
-
-
100  
-100  
-
nA  
V
td(ON)  
tr  
td(OFF)  
tf  
20  
25  
25  
40  
-
ns  
TURN OFF DELAY TIME  
FALL TIME  
DIODE FORWARD VOLTAGE TJ = 25°C,ISD = 150 mA  
GS = -5V  
VGS = 0V to - 10V  
VSD  
-
-
-
1.8  
-
V
V
trr  
800  
-
ns  
REVERSE RECOVERY TIME  
TJ = 25°C,  
GS = -5V, ISD = 150mA  
VGS = -5V, VDS = 25V,  
f = 1.0MHz  
V
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
Ciss  
Coss  
Crss  
350  
60  
20  
pF  
REVERSE TRANSFER CAPACITANCE  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

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