Datasheet > SHD226409_09

SHD226409_09

更新时间： 2024-11-27 09:26:39

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	36K
描述
HERMETIC POWER MOSFET P-CHANNEL

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SHD226409_09 数据手册

SENSITRON

SEMICONDUCTOR

SHD226409

TECHNICAL DATA

DATA SHEET 582, REV. -

HERMETIC POWER MOSFET

P-CHANNEL

FEATURES:

•

-100 Volt, 0.21 Ohm, -13A MOSFET

Isolated Hermetic Metal Package

Fast Switching

Equivalent to IRFY9140 Series

MAXIMUM RATINGS

ALL RATINGS ARE AT T_C= 25°C UNLESS OTHERWISE SPECIFIED.

RATING

GATE TO SOURCE VOLTAGE

SYMBOL

V_GS

I_{D (on)}

I_DM

T_OP/T_STG

R_thJC

MIN.

-55

TYP.

MAX.

±20

-13

-52

+150

2.1

UNITS

Volts

Amps

ON-STATE DRAIN CURRENT

PULSED DRAIN CURRENT

OPERATING AND STORAGE TEMPERATURE

@ T_C= 25°C

°C

°C/W

Watts

THERMAL RESISTANCE, JUNCTION TO CASE

P_D

TOTAL DEVICE DISSIPATION

@ T_C= 25°C

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNITS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

-100

Volts

V_GS= 0V, I_D= 1.0 mA

TOTAL GATE CHARGE

Q_g

Q_gs

Q_gd

3.7

7.0

V_GS= -10V, I_D= -13A, V_DS= 0.5 x V_DSMax.

GATE TO SOURCE ON-STATE VOLTAGE

V_GS= -10V, I_D= -13A, V_DS= 0.5 x V_DSMax.

GATE DRAIN CHARGE

35.2

V_GS= -10V, I_D= -13A, V_DS= 0.5 x V_DSMax.

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

V_GS= 10V, I_D= -8.4A

R_DS(ON)

0.21

0.24

-4.0

V_GS= 10V, I_D= -13A

V_GS(th)

g_fs

-2.0

6.2

Volts

GATE THRESHOLD VOLTAGE V_DS= V_GS, I_D= -250μA

FORWARD TRANSCONDUCTANCE

V_DS≥ 15V_DS(on), I_D= -8.2A

S(1/Ω)

ZERO GATE VOLTAGE DRAIN CURRENT

_DS= 0.8x Max. Rating, V_GS= 0V

_DS= 0.8x Max. Rating, V_GS= 0V, T_J= 125°C

I_DSS

I_GSS

-25

-250

100

-100

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

V_GS= 20V

_GS= -20V

V_DD= -50V,

I_D= -13A,

t_d(ON)

t_r

t_d(OFF)

t_f

nsec

Volts

nsec

R_G= 9.1Ω,

V_GS= -10V

V_SD

-4.2

280

DIODE FORWARD VOLTAGE

T_C= 25°C, I_S= -13A,

_GS= 0V

T_J= 25°C,

t_rr

REVERSE RECOVERY TIME

I_S= -13 A, di/dt ≤ -100A/μsec,

V_DD≤ -50 V

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

V_GS= 0 V,

V_DS= 25 V,

f = 1.0MHz

C_iss

C_oss

C_rss

1400

600

200

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• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

中文翻译

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与SHD226409_09相关器件

型号	品牌	获取价格	描述	数据表
SHD226410	SENSITRON	获取价格	HERMETIC POWER MOSFET P-CHANNEL
SHD226412	SENSITRON	获取价格	HERMETIC POWER MOSFET N-CHANNEL
SHD226412R	SENSITRON	获取价格	HERMETIC POWER MOSFET N-CHANNEL
SHD226413	SENSITRON	获取价格	HERMETIC POWER MOSFET N-CHANNEL
SHD2264C	SENSITRON	获取价格	暂无描述
SHD226701	SENSITRON	获取价格	LOW RDS(on) HERMETIC POWER MOSFET - N-CHANNEL
SHD226703	SENSITRON	获取价格	HERMETIC POWER MOSFET - N-CHANNEL
SHD226707	SENSITRON	获取价格	HERMETIC POWER MOSFET N-CHANNEL
SHD2301	SENSITRON	获取价格	Power Field-Effect Transistor, 33A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
SHD23010	SENSITRON	获取价格	Power Field-Effect Transistor, 8.5A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me

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