是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-247AC |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 6.2 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE | 最大降落时间(tf): | 102 ns |
门极发射器阈值电压最大值: | 5 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-247AC | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 21 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 375 ns | 标称接通时间 (ton): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGW02N120_06 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGW10N60 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGW10N60A | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGW10N60AFKSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL | |
SGW10N60RUF | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGW10N60RUFD | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGW10N60RUFDTM | FAIRCHILD |
获取价格 |
暂无描述 | |
SGW13N60UF | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGW13N60UFD | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGW13N60UFDTM | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 |