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SGW23N60UFTM PDF预览

SGW23N60UFTM

更新时间: 2024-09-19 21:16:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 电动机控制瞄准线开关晶体管
页数 文件大小 规格书
7页 529K
描述
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

SGW23N60UFTM 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:D2PAK-3
针数:3Reach Compliance Code:not_compliant
风险等级:5.73其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
外壳连接:COLLECTOR最大集电极电流 (IC):23 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):220 ns门极发射器阈值电压最大值:7.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):320 ns
标称接通时间 (ton):55 nsBase Number Matches:1

SGW23N60UFTM 数据手册

 浏览型号SGW23N60UFTM的Datasheet PDF文件第2页浏览型号SGW23N60UFTM的Datasheet PDF文件第3页浏览型号SGW23N60UFTM的Datasheet PDF文件第4页浏览型号SGW23N60UFTM的Datasheet PDF文件第5页浏览型号SGW23N60UFTM的Datasheet PDF文件第6页浏览型号SGW23N60UFTM的Datasheet PDF文件第7页 
IGBT  
SGW23N60UF  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's UF series of Insulated Gate Bipolar Transistors  
(IGBTs) provides low conduction and switching losses.  
The UF series is designed for applications such as motor  
control and general inverters where high speed switching is  
a required feature.  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.1 V @ I = 12A  
CE(sat)  
C
Applications  
AC & DC motor controls, general purpose inverters, robotics, and servo controls.  
C
E
C
G
D2-PAK  
G
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGW23N60UF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
23  
A
C
I
I
C
Collector Current  
@ T = 100°C  
12  
92  
A
C
Pulsed Collector Current  
A
CM (1)  
P
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T  
=
25°C  
100  
W
W
°C  
°C  
D
C
@ T = 100°C  
40  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
1.2  
40  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient (PCB Mount)  
--  
(2)  
Notes :  
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)  
©2002 Fairchild Semiconductor Corporation  
SGW23N60UF Rev. A1  

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