是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-263 | 包装说明: | D2PAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.73 | 其他特性: | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 23 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 220 ns | 门极发射器阈值电压最大值: | 7.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 320 ns |
标称接通时间 (ton): | 55 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGW25N120 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGW25N120_09 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | |
SGW30N60 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGW30N60FKSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL | |
SGW30N60HS | INFINEON |
获取价格 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation | |
SGW30N60HSXK | INFINEON |
获取价格 |
暂无描述 | |
SGW30N60XK | INFINEON |
获取价格 |
暂无描述 | |
SGW50N60HS | INFINEON |
获取价格 |
High Speed IGBT in NPT-technology | |
SGW50N60HS_09 | INFINEON |
获取价格 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation | |
SGW50N60HSXK | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, P |