Datasheet > SGW50N60HS_09

SGW50N60HS_09

更新时间： 2024-11-08 06:11:27

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
11页	350K
描述
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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SGW50N60HS_09 数据手册

SGW50N60HS

High Speed IGBT in NPT-technology

• 30% lower E_offcompared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:

- parallel switching capability

PG-TO-247-3

- moderate E_offincrease with temperature

- very tight parameter distribution

•

High ruggedness, temperature stable behaviour

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC¹for target applications

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

E_off25

T_j

Marking

Package

SGW50N60HS

Maximum Ratings

Parameter

600V

50A 0.88mJ

G50N60HS PG-TO-247-3

150°C

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

100

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

150

_CE≤ 600V, T_j≤ 150°C

Avalanche energy single pulse

I_C= 50A, V_CC=50V, R_GE=25Ω

start T_J=25°C

E_AS

280

Gate-emitter voltage static

V_GE

t_SC

±20

±30

transient (t_p<1µs, D<0.05)

Short circuit withstand time²⁾

µs

°C

_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

T_C= 25°C

Operating junction and storage temperature

P_tot

416

T_j,

-55...+150

T_stg

Time limited operating junction temperature for t < 150h

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j(tl)

175

260

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3 Nov 09

Power Semiconductors

12 3 4 5 6 7...11

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