生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 370 ns |
标称接通时间 (ton): | 79 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGW5N60RUF | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGW5N60RUFD | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGW5N60RUFDTM | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | |
SGW5N60RUFDTM | ROCHESTER |
获取价格 |
8A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3 | |
SGW5N60RUFTM | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | |
SGW6N60UF | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGW6N60UFD | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGW6N60UFDTM | FAIRCHILD |
获取价格 |
暂无描述 | |
SGW6N60UFTM | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | |
SGX0008-0G-EF | FOXCONN |
获取价格 |
RF SMA Connector, Male, Board Mount, Solder Terminal, LEAD FREE |