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SGW50N60HSXK

更新时间: 2024-11-08 12:58:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
11页 350K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN

SGW50N60HSXK 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.73
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):100 A集电极-发射极最大电压:600 V
配置:SINGLEJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):370 ns
标称接通时间 (ton):79 nsBase Number Matches:1

SGW50N60HSXK 数据手册

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SGW50N60HS  
High Speed IGBT in NPT-technology  
30% lower Eoff compared to previous generation  
Short circuit withstand time – 10 µs  
C
G
E
Designed for operation above 30 kHz  
NPT-Technology for 600V applications offers:  
- parallel switching capability  
PG-TO-247-3  
- moderate Eoff increase with temperature  
- very tight parameter distribution  
High ruggedness, temperature stable behaviour  
Pb-free lead plating; RoHS compliant  
Qualified according to JEDEC1 for target applications  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
Eoff25  
Tj  
Marking  
Package  
SGW50N60HS  
Maximum Ratings  
Parameter  
600V  
50A 0.88mJ  
G50N60HS PG-TO-247-3  
150°C  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current  
TC = 25°C  
VCE  
IC  
600  
V
A
100  
50  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
Turn off safe operating area  
ICpuls  
-
150  
150  
V
CE 600V, Tj 150°C  
Avalanche energy single pulse  
IC = 50A, VCC=50V, RGE=25  
start TJ=25°C  
EAS  
280  
mJ  
Gate-emitter voltage static  
VGE  
tSC  
V
±20  
±30  
transient (tp<1µs, D<0.05)  
Short circuit withstand time2)  
10  
µs  
W
°C  
V
GE = 15V, VCC 600V, Tj 150°C  
Power dissipation  
TC = 25°C  
Operating junction and storage temperature  
Ptot  
416  
Tj ,  
-55...+150  
Tstg  
Time limited operating junction temperature for t < 150h  
Soldering temperature, 1.6mm (0.063 in.) from case for 10s  
Tj(tl)  
-
175  
260  
1 J-STD-020 and JESD-022  
2) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2.3 Nov 09  
Power Semiconductors  

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