是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.76 | Is Samacsys: | N |
其他特性: | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 16 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最大降落时间(tf): | 220 ns |
门极发射器阈值电压最大值: | 8 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 75 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 284 ns |
标称接通时间 (ton): | 49 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGW10N60RUFDTM | FAIRCHILD |
获取价格 |
暂无描述 | |
SGW13N60UF | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGW13N60UFD | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT | |
SGW13N60UFDTM | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | |
SGW13N60UFDTM | ROCHESTER |
获取价格 |
13A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3 | |
SGW15N120 | INFINEON |
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Fast IGBT in NPT-technology | |
SGW15N120FKSA1 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGW15N60 | FAIRCHILD |
获取价格 |
Short Circuit Rated IGBT | |
SGW15N60 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGW15N60FKSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL |