Datasheet > SEMIX603GB066HDS_09

SEMIX603GB066HDS_09

更新时间： 2024-09-15 06:11:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	380K
描述
Trench IGBT Modules

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数据手册

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SEMIX603GB066HDS_09 数据手册

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SEMiX603GB066HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

600

720

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

541

I_Cnom

I_CRM

V_GES

600

I_CRM= 2xI_Cnom

1200

-20 ... 20

SEMiX^®3s

V_CC= 360 V

V_GE≤ 15 V

V_CES≤ 600 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Trench IGBT Modules

SEMiX603GB066HDs

Features

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

771

562

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

600

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

1200

1800

• Homogeneous Si

-40 ... 175

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

Module

I_t(RMS)

T_stg

600

-40 ... 125

4000

°C

• UL recognised file no. E63532

V_isol

AC sinus 50Hz, t = 1 min

Typical Applications*

• Matrix Converter

• Resonant Inverter

• Current Source Inverter

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

• Case temperature limited to T_C=125°C

max.

I_C= 600 A

V_CE(sat)

T_j= 25 °C

1.45

1.7

1.85

2.1

_GE= 15 V

T_j= 150 °C

chiplevel

• Product reliability results are valid for

T_j=150°C

• For short circuit: Soft R_Goff

recommended

• Take care of over-voltage caused by

stray inductance

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.9

0.85

0.9

1.4

2.0

6.5

0.45

mΩ

V_GE= 15 V

1.4

V_GE(th)

I_CES

V_GE=V_CE, I_C= 9.6 mA

T_j= 25 °C

5.8

0.15

Ω

V_GE= 0 V

_CE= 600 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

37.0

2.31

1.10

4800

0.67

150

145

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

T_j= 150 °C

V_CC= 300 V

I_C= 600 A

E_on

t_d(off)

t_f

R_{G on}= 3 Ω

1050

105

_{G off}= 3 Ω

E_off

R_th(j-c)

K/W

per IGBT

0.087

Rev. 13 – 16.12.2009

12 3 4 5 6

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