Datasheet > SEMIX604GB126HDS_08

SEMIX604GB126HDS_08

更新时间： 2024-11-05 06:11:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	369K
描述
Trench IGBT Modules

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SEMIX604GB126HDS_08 数据手册

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SEMiX604GB126HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

590

T_c= 25°C

T_c= 80°C

I_C

T_j= 150°C

413

I_CRM

I_CRM= 2xI_Cnom

800

V_GES

-20 ... 20

V_CC= 600V

V_GE≤ 20V

T_j= 125°C

SEMiX^®4s

t_psc

µs

°C

V_CES≤ 1200V

T_j

-40 ... 150

Trench IGBT Modules

Inverse diode

T_c= 25°C

T_c= 80°C

I_F

533

367

T_j= 150°C

SEMiX604GB126HDs

Preliminary Data

Features

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10ms, half sine wave, T_j= 25°C

800

2500

-40 ... 150

°C

Module

I_t(RMS)

T_stg

• Homogeneous Si

600

-40 ... 125

4000

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

V_isol

AC sinus 50Hz, t = 60s

Characteristics

Typical Applications

Symbol Conditions

IGBT

min.

typ.

max.

Unit

• AC inverter drives

• UPS

• Electronic Welding

I_Cnom= 400A

V_CE(sat)

T_j= 25°C

1.7

2.1

_GE= 15V

T_j= 125°C

2.00

2.45

chiplevel

Remarks

• Case temperatur limited to T_C=125°C

max.

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

V_CE0

r_CE

1.2

1.1

0.9

1.8

2.8

5.8

0.12

2.3

mΩ

• Not for new design

V_GE= 15V

3.4

V_GE(th)

I_CES

V_GE=V_CE, I_C= 16mA

T_j= 25°C

6.5

0.36

Ω

V_GE= 0V

_CE= 1200V

T_j= 125°C

f = 1MHz

C_ies

C_oes

C_res

Q_G

28.8

1.51

1.31

3200

1.88

330

V_CE= 25V

_GE= 0V

V_GE= - 8 V...+ 15 V

T_j= 25°C

R_Gint

t_d(on)

t_r

V_CC= 600V

_Cnom= 400A

T_j= 125°C

E_on

t_d(off)

t_f

_{G on}= 2.2Ω

_{G off}= 2.2Ω

630

130

E_off

R_th(j-c)

K/W

per IGBT

0.065

03.04.2008

12 3 4 5

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