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SEMIX604GB12VS PDF预览

SEMIX604GB12VS

更新时间: 2024-11-05 09:29:19
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 375K
描述
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SEMIX604GB12VS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X23针数:25
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):880 A
集电极-发射极最大电压:1200 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X23
元件数量:2端子数量:23
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):890 ns标称接通时间 (ton):611 ns
VCEsat-Max:2.2 VBase Number Matches:1

SEMIX604GB12VS 数据手册

 浏览型号SEMIX604GB12VS的Datasheet PDF文件第2页浏览型号SEMIX604GB12VS的Datasheet PDF文件第3页浏览型号SEMIX604GB12VS的Datasheet PDF文件第4页浏览型号SEMIX604GB12VS的Datasheet PDF文件第5页 
SEMiX604GB12Vs  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
IC  
1200  
880  
670  
600  
1800  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
VCC = 600 V  
SEMiX® 4s  
V
V
GE 15 V  
CES 1200 V  
Tj = 125 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
707  
529  
600  
1800  
3240  
A
A
A
A
A
Tj = 175 °C  
SEMiX604GB12Vs  
Features  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
• Homogeneous Si  
-40 ... 175  
°C  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognised file no. E63532  
Module  
It(RMS)  
Tstg  
Tterminal = 80 °C  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications*  
• AC inverter drives  
• UPS  
Characteristics  
Symbol Conditions  
IGBT  
• Electronic Welding  
min.  
typ.  
max.  
Unit  
Remarks  
• Case temperature limited to TC=125°C  
max.  
IC = 600 A  
Tj = 25 °C  
VCE(sat)  
1.75  
2.2  
2.2  
2.5  
V
V
V
GE = 15 V  
Tj = 150 °C  
• Product reliability results are valid for  
Tj=150°C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.94  
0.88  
1.4  
2.2  
6
1.04  
0.98  
1.9  
2.5  
6.5  
V
V
m  
m  
V
mA  
mA  
nF  
nF  
nF  
nC  
• Dynamic values apply to the  
following combination of resistors:  
R
R
R
R
Gon,main = 1,0   
Goff,main = 1,0   
G,X = 2,2   
VGE = 15 V  
VGE(th)  
ICES  
VGE=VCE, IC = 24 mA  
Tj = 25 °C  
5.5  
E,X = 0,5   
0.1  
0.3  
VGE = 0 V  
CE = 1200 V  
V
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
36.0  
3.55  
3.54  
6600  
1.25  
517  
94  
58.7  
788  
102  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
ns  
ns  
mJ  
ns  
ns  
I
C = 600 A  
V
GE = ±15 V  
R
R
G on = 1.7   
G off = 1.7   
di/dton = 6300 A/µs  
di/dtoff = 5400 A/µs  
du/dtoff = 6800 V/  
µs  
Tj = 150 °C  
Eoff  
78.5  
mJ  
Rth(j-c)  
per IGBT  
0.051  
K/W  
GB  
© by SEMIKRON  
Rev. 2 – 16.02.2011  
1

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