Datasheet > SEMIX603GB066HDS_11

SEMIX603GB066HDS_11

更新时间： 2024-09-15 09:29:19

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	627K
描述
Trench IGBT Modules

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SEMIX603GB066HDS_11 数据手册

浏览型号SEMIX603GB066HDS_11的Datasheet PDF文件第2页

浏览型号SEMIX603GB066HDS_11的Datasheet PDF文件第3页

SEMiX603GB066HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

I_C

600

720

541

600

1200

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 2xI_Cnom

V_CC= 360 V

SEMiX^®3s

Trench IGBT Modules

SEMiX603GB066HDs

Features

_GE≤ 15 V

_CES≤ 600 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

771

562

600

1200

1800

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• Homogeneous Si

-40 ... 175

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

Module

I_t(RMS)

T_stg

T_terminal= 80 °C

600

-40 ... 125

4000

°C

• UL recognised file no. E63532

V_isol

AC sinus 50Hz, t = 1 min

Typical Applications*

• Matrix Converter

Characteristics

Symbol Conditions

IGBT

• Resonant Inverter

• Current Source Inverter

min.

typ.

max.

Unit

Remarks

I_C= 600 A

T_j= 25 °C

V_CE(sat)

1.45

1.7

1.85

2.1

• Case temperature limited to T_C=125°C

max.

_GE= 15 V

T_j= 150 °C

chiplevel

• Product reliability results are valid for

T_j=150°C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.9

0.85

0.9

1.4

5.8

m



0.9

1.4

2.0

6.5

0.45

• For short circuit: Soft R_Goff

recommended

V_GE= 15 V

• Take care of over-voltage caused by

stray inductance

V_GE(th)

I_CES

V_GE=V_CE, I_C= 9.6 mA

T_j= 25 °C

0.15

V_GE= 0 V

_CE= 600 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

37.0

2.31

1.10

4800

0.67

150

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 300 V

T_j= 150 °C

_C= 600 A

145

_GE= ±15 V

1050

105

_{G on}= 3 

_{G off}= 3 

T_j= 150 °C

E_off

R_th(j-c)

per IGBT

0.087

K/W

Rev. 1 – 23.03.2011

12 3 4 5

中文翻译

下载PDF

与SEMIX603GB066HDS_11相关器件

型号	品牌	获取价格	描述	数据表
SEMIX603GB12E4I25P	SEMIKRON	获取价格	Insulated Gate Bipolar Transistor,
SEMIX603GB12E4IP	SEMIKRON	获取价格	Insulated Gate Bipolar Transistor
SEMIX603GB12E4P	SEMIKRON	获取价格	Insulated Gate Bipolar Transistor,
SEMiX603GB12E4pV1	SEMIKRON	获取价格	IGBT Modules SEMiX 3p (150x62x17)
SEMiX603GB12E4SiCp	SEMIKRON	获取价格	SiC Modules SEMiX 3p (150x62x17)
SEMiX603GB12M7p	SEMIKRON	获取价格	IGBT Modules SEMiX 3p (150x62x17)
SEMiX603GB17E4pV1	SEMIKRON	获取价格	IGBT Modules SEMiX 3p (150x62x17)
SEMiX603KD16p	SEMIKRON	获取价格	Thyristor / Diode Modules SEMiX 3p (150x62x17)
SEMIX604GAL12E4S	SEMIKRON	获取价格	Trench IGBT Modules
SEMIX604GAR12E4S	SEMIKRON	获取价格	Trench IGBT Modules