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SEMiX603GB12E4SiCp PDF预览

SEMiX603GB12E4SiCp

更新时间: 2024-11-20 14:55:59
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赛米控丹佛斯 - SEMIKRON /
页数 文件大小 规格书
6页 595K
描述
SiC Modules SEMiX 3p (150x62x17)

SEMiX603GB12E4SiCp 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.66
Base Number Matches:1

SEMiX603GB12E4SiCp 数据手册

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SEMiX603GB12E4SiCp  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
1110  
853  
600  
1200  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 2xICnom  
VCC = 800 V  
-20 ... 20  
SEMiX® 3p  
V
V
GE 15 V  
CES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Trench IGBT Modules  
SEMiX603GB12E4SiCp  
Features  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
1200  
404  
306  
300  
900  
V
A
A
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
• With Silicon Carbide (SiC) Schottky  
diodes  
tp = 8.3 ms, sin 180°, Tj = 25 °C  
994  
-40 ... 175  
A
°C  
• Homogeneous Si  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• Press-fit pins as auxiliary contacts  
• Thermally optimized ceramic  
• UL recognized, file no. E63532  
Module  
It(RMS)  
Tstg  
600  
-40 ... 125  
4000  
A
°C  
V
module without TIM  
AC sinus 50Hz, t = 1 min  
Visol  
Characteristics  
Typical Applications*  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• AC inverter drives  
• UPS  
• Renewable energy systems  
IC = 600 A  
Tj = 25 °C  
VCE(sat)  
1.80  
2.03  
2.05  
2.30  
V
V
V
GE = 15 V  
Remarks  
• Product reliability results are valid for  
Tj=150°C  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.87  
0.77  
1.55  
2.1  
1.01  
0.9  
1.73  
2.3  
6.3  
5
V
V
mΩ  
mΩ  
V
mA  
nF  
nF  
nF  
nC  
Ω
chiplevel  
• Visol between temperature sensor and  
power section is only 2500V  
• RG off must be at least 16Ω in case  
VGE = 15 V  
chiplevel  
V
CC 900V  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
VGE=VCE, IC = 22.2 mA  
VGE = 0 V, VCE = 1200 V, Tj = 25 °C  
f = 1 MHz  
5.3  
5.8  
• For storage and case temperature with  
TIM see document “TP(*) SEMiX 3p”  
37.5  
2.31  
2.04  
3450  
1.2  
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
145  
68  
17  
520  
130  
ns  
ns  
mJ  
ns  
ns  
I
C = 600 A  
V
GE = +15/-15 V  
Eon  
td(off)  
tf  
R
R
G on = 1.1 Ω  
G off = 1.1 Ω  
di/dton = 7550 A/µs  
di/dtoff = 4220 A/µs  
du/dt = 3450 V/µs  
Ls = 21 nH  
Tj = 150 °C  
Eoff  
72  
mJ  
Rth(j-c)  
Rth(c-s)  
per IGBT  
per IGBT (λgrease=0.81 W/(m*K))  
per IGBT, pre-applied phase change  
material  
0.037  
K/W  
K/W  
0.035  
0.025  
Rth(c-s)  
K/W  
GB  
© by SEMIKRON  
Rev. 1.0 – 09.04.2018  
1

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