SEMiX603GB12E4SiCp
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
1110
853
600
1200
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 2xICnom
VCC = 800 V
-20 ... 20
SEMiX® 3p
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Trench IGBT Modules
SEMiX603GB12E4SiCp
Features
Inverse diode
Tj = 25 °C
VRRM
IF
1200
404
306
300
900
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
• With Silicon Carbide (SiC) Schottky
diodes
tp = 8.3 ms, sin 180°, Tj = 25 °C
994
-40 ... 175
A
°C
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• UL recognized, file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
module without TIM
AC sinus 50Hz, t = 1 min
Visol
Characteristics
Typical Applications*
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• AC inverter drives
• UPS
• Renewable energy systems
IC = 600 A
Tj = 25 °C
VCE(sat)
1.80
2.03
2.05
2.30
V
V
V
GE = 15 V
Remarks
• Product reliability results are valid for
Tj=150°C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.87
0.77
1.55
2.1
1.01
0.9
1.73
2.3
6.3
5
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
chiplevel
• Visol between temperature sensor and
power section is only 2500V
• RG off must be at least 16Ω in case
VGE = 15 V
chiplevel
V
CC ≥ 900V
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
VGE=VCE, IC = 22.2 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
f = 1 MHz
5.3
5.8
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
37.5
2.31
2.04
3450
1.2
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
145
68
17
520
130
ns
ns
mJ
ns
ns
I
C = 600 A
V
GE = +15/-15 V
Eon
td(off)
tf
R
R
G on = 1.1 Ω
G off = 1.1 Ω
di/dton = 7550 A/µs
di/dtoff = 4220 A/µs
du/dt = 3450 V/µs
Ls = 21 nH
Tj = 150 °C
Eoff
72
mJ
Rth(j-c)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
0.037
K/W
K/W
0.035
0.025
Rth(c-s)
K/W
GB
© by SEMIKRON
Rev. 1.0 – 09.04.2018
1