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SEMIX553GB128DS_09 PDF预览

SEMIX553GB128DS_09

更新时间: 2024-10-31 09:29:19
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
6页 378K
描述
SPT IGBT Modules

SEMIX553GB128DS_09 数据手册

 浏览型号SEMIX553GB128DS_09的Datasheet PDF文件第2页浏览型号SEMIX553GB128DS_09的Datasheet PDF文件第3页浏览型号SEMIX553GB128DS_09的Datasheet PDF文件第4页浏览型号SEMIX553GB128DS_09的Datasheet PDF文件第5页浏览型号SEMIX553GB128DS_09的Datasheet PDF文件第6页 
SEMiX553GB128Ds  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
533  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 150 °C  
379  
ICnom  
300  
ICRM  
ICRM = 2xICnom  
600  
VGES  
-20 ... 20  
SEMiX® 3s  
SPT IGBT Modules  
SEMiX553GB128Ds  
Features  
VCC = 600 V  
VGE 20 V  
VCES 1200 V  
Tj = 125 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 150  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
421  
289  
A
A
Tj = 150 °C  
IFnom  
IFRM  
IFSM  
Tj  
300  
A
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
600  
A
2300  
A
• Homogeneous Si  
-40 ... 150  
°C  
• SPT = Soft-Punch-Through technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognised file no. E63532  
Module  
It(RMS)  
Tstg  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications*  
Characteristics  
Symbol Conditions  
IGBT  
• AC inverter drives  
• UPS  
• Electronic welders up to 20 kHz  
min.  
typ.  
max.  
Unit  
IC = 300 A  
VCE(sat)  
Tj = 25 °C  
1.9  
2.1  
2.35  
2.55  
V
V
V
GE = 15 V  
Tj = 125 °C  
chiplevel  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
VCE0  
rCE  
1
1.15  
1.05  
4.0  
V
V
0.9  
3.0  
4.0  
5
mΩ  
mΩ  
V
VGE = 15 V  
5.0  
VGE(th)  
ICES  
VGE=VCE, IC = 12 mA  
Tj = 25 °C  
4.5  
6.5  
0.1  
0.3  
mA  
mA  
nF  
nF  
nF  
nC  
VGE = 0 V  
CE = 1200 V  
V
Tj = 125 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
28.3  
1.86  
1.17  
2880  
1.33  
185  
65  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
td(on)  
tr  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
ns  
VCC = 600 V  
IC = 300 A  
ns  
Eon  
td(off)  
tf  
27  
mJ  
ns  
RG on = 3 Ω  
635  
80  
R
G off = 3 Ω  
ns  
Eoff  
Rth(j-c)  
33  
mJ  
K/W  
per IGBT  
0.061  
GB  
© by SEMIKRON  
Rev. 8 – 16.12.2009  
1

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