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SEMIX603GAR066HDS_10 PDF预览

SEMIX603GAR066HDS_10

更新时间: 2024-11-19 09:29:19
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 347K
描述
Trench IGBT Modules

SEMIX603GAR066HDS_10 数据手册

 浏览型号SEMIX603GAR066HDS_10的Datasheet PDF文件第2页浏览型号SEMIX603GAR066HDS_10的Datasheet PDF文件第3页浏览型号SEMIX603GAR066HDS_10的Datasheet PDF文件第4页浏览型号SEMIX603GAR066HDS_10的Datasheet PDF文件第5页 
SEMiX603GAR066HDs  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
600  
720  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 175 °C  
541  
ICnom  
600  
ICRM  
ICRM = 2xICnom  
1200  
-20 ... 20  
VGES  
SEMiX® 3s  
VCC = 360 V  
VGE 15 V  
VCES 600 V  
Tj = 150 °C  
tpsc  
6
µs  
°C  
Tj  
-40 ... 175  
Trench IGBT Modules  
SEMiX603GAR066HDs  
Features  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
771  
562  
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
600  
A
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
1200  
A
1800  
A
• Homogeneous Si  
-40 ... 175  
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
Freewheeling diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
795  
577  
A
A
Tj = 175 °C  
• UL recognised file no. E63532  
IFnom  
600  
A
Typical Applications*  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
1200  
A
• Matrix Converter  
• Resonant Inverter  
• Current Source Inverter  
1800  
A
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
Remarks  
• Case temperature limited to TC=125°C  
max.  
• Product reliability results are valid for  
Tj=150°C  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Characteristics  
• For short circuit: Soft RGoff  
recommended  
• Take care of over-voltage caused by  
stray inductance  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
IC = 600 A  
VCE(sat)  
Tj = 25 °C  
1.45  
1.7  
1.85  
2.1  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.9  
0.85  
0.9  
1
V
V
0.9  
1.4  
2.0  
6.5  
0.45  
mΩ  
mΩ  
V
VGE = 15 V  
1.4  
VGE(th)  
ICES  
VGE=VCE, IC = 9.6 mA  
Tj = 25 °C  
5
5.8  
0.15  
mA  
mA  
nF  
nF  
nF  
nC  
VGE = 0 V  
CE = 600 V  
V
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
37.0  
2.31  
1.10  
4800  
0.67  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
GAR  
© by SEMIKRON  
Rev. 0 – 16.04.2010  
1

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