SEMiX603GAR066HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
600
720
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
541
ICnom
600
ICRM
ICRM = 2xICnom
1200
-20 ... 20
VGES
SEMiX® 3s
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C
tpsc
6
µs
°C
Tj
-40 ... 175
Trench IGBT Modules
SEMiX603GAR066HDs
Features
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
771
562
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
600
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
1800
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Freewheeling diode
Tc = 25 °C
Tc = 80 °C
IF
795
577
A
A
Tj = 175 °C
• UL recognised file no. E63532
IFnom
600
A
Typical Applications*
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
1800
A
-40 ... 175
°C
Module
It(RMS)
Tstg
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Characteristics
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 600 A
VCE(sat)
Tj = 25 °C
1.45
1.7
1.85
2.1
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
0.9
1
V
V
0.9
1.4
2.0
6.5
0.45
mΩ
mΩ
V
VGE = 15 V
1.4
VGE(th)
ICES
VGE=VCE, IC = 9.6 mA
Tj = 25 °C
5
5.8
0.15
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 600 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
37.0
2.31
1.10
4800
0.67
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAR
© by SEMIKRON
Rev. 0 – 16.04.2010
1