Datasheet > SEMiX603GAL12E4p

SEMiX603GAL12E4p

更新时间： 2024-11-20 14:55:51

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
7页	647K
描述
IGBT Modules SEMiX 3p (150x62x17)

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中文翻译

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数据手册

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SEMiX603GAL12E4p 数据手册

SEMiX603GAL12E4p

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

1110

853

600

1800

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

V_CC= 800 V

-20 ... 20

SEMiX^®3p

Trench IGBT Modules

SEMiX603GAL12E4p

Features

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1200

856

640

600

1200

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• Homogeneous Si

3456

-40 ... 175

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• Press-fit pins as auxiliary contacts

• Thermally optimized ceramic

• UL recognized, file no. E63532

Freewheeling diode

T_j= 25 °C

V_RRM

I_F

1200

856

640

600

1200

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

Typical Applications*

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• AC inverter drives

• UPS

3456

-40 ... 175

°C

• Renewable energy systems

Module

I_t(RMS)

T_stg

Remarks

600

-40 ... 125

4000

°C

• Product reliability results are valid for

T_j=150°C

module without TIM

AC sinus 50Hz, t = 1 min

• V_isolbetween temperature sensor and

power section is only 2500V

• For storage and case temperature with

TIM see document “TP(*) SEMiX 3p”

V_isol

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 600 A

T_j= 25 °C

V_CE(sat)

1.80

2.03

2.05

2.30

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.87

0.77

1.55

2.1

1.01

0.9

1.73

2.3

6.3

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

V_GE=V_CE, I_C= 22.2 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.3

5.8

37.5

2.31

2.04

3450

1.2

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAL

Rev. 1.0 – 24.11.2017

12 3 4 5 6 7

中文翻译

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