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SEMiX603GAL17E4p PDF预览

SEMiX603GAL17E4p

更新时间: 2024-11-20 14:57:23
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
7页 688K
描述
IGBT Modules SEMiX 3p (150x62x17)

SEMiX603GAL17E4p 数据手册

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SEMiX603GAL17E4p  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1700  
835  
638  
600  
1800  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMiX® 3p  
Trench IGBT Modules  
SEMiX603GAL17E4p  
Features*  
VCC = 1000 V  
V
V
GE 15 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
CES 1700 V  
Tj  
-40 ... 175  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
1700  
736  
542  
1200  
3510  
V
A
A
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFRM  
IFSM  
Tj  
tp = 10 ms, sin 180°, Tj = 25 °C  
• Homogeneous Si  
-40 ... 175  
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• Press-fit pins as auxiliary contacts  
• UL recognized, file no. E63532  
Freewheeling diode  
Tj = 25 °C  
VRRM  
IF  
1700  
703  
517  
1200  
3510  
V
A
A
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFRM  
IFSM  
Tj  
Typical Applications  
tp = 10 ms, sin 180°, Tj = 25 °C  
• AC inverter drives  
• UPS  
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
• Renewable energy systems  
600  
-40 ... 125  
4000  
A
°C  
V
Remarks  
module without TIM  
AC sinus 50Hz, t = 1 min  
• Product reliability results are valid for  
Tj=150°C  
Visol  
• Visol between temperature sensor and  
power section is only 2500V  
Characteristics  
• For storage and case temperature with  
TIM see document “TP(*) SEMiX 3p”  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
IC = 600 A  
Tj = 25 °C  
VCE(sat)  
1.95  
2.48  
2.30  
2.80  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
1.02  
0.92  
1.55  
2.6  
1.20  
1.03  
1.83  
3.0  
6.2  
V
V
mΩ  
mΩ  
V
mA  
nF  
nF  
nF  
nC  
Ω
chiplevel  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
VGE = VCE, IC = 24 mA  
VGE = 0 V, VCE = 1700 V, Tj = 25 °C  
f = 1 MHz  
5.2  
5.8  
5
46.5  
1.98  
1.65  
4800  
1.1  
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
GAL  
© by SEMIKRON  
Rev. 1.0 – 14.04.2022  
1

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