SEMiX603GAL17E4p
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1700
835
638
600
1800
-20 ... 20
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
SEMiX® 3p
Trench IGBT Modules
SEMiX603GAL17E4p
Features*
VCC = 1000 V
V
V
GE ≤ 15 V
Tj = 150 °C
tpsc
10
µs
°C
CES ≤ 1700 V
Tj
-40 ... 175
Inverse diode
Tj = 25 °C
VRRM
IF
1700
736
542
1200
3510
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFRM
IFSM
Tj
tp = 10 ms, sin 180°, Tj = 25 °C
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532
Freewheeling diode
Tj = 25 °C
VRRM
IF
1700
703
517
1200
3510
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFRM
IFSM
Tj
Typical Applications
tp = 10 ms, sin 180°, Tj = 25 °C
• AC inverter drives
• UPS
-40 ... 175
°C
Module
It(RMS)
Tstg
• Renewable energy systems
600
-40 ... 125
4000
A
°C
V
Remarks
module without TIM
AC sinus 50Hz, t = 1 min
• Product reliability results are valid for
Tj=150°C
Visol
• Visol between temperature sensor and
power section is only 2500V
Characteristics
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 600 A
Tj = 25 °C
VCE(sat)
1.95
2.48
2.30
2.80
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
1.02
0.92
1.55
2.6
1.20
1.03
1.83
3.0
6.2
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
chiplevel
VGE = 15 V
chiplevel
VGE(th)
ICES
Cies
Coes
Cres
QG
VGE = VCE, IC = 24 mA
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
f = 1 MHz
5.2
5.8
5
46.5
1.98
1.65
4800
1.1
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAL
© by SEMIKRON
Rev. 1.0 – 14.04.2022
1