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SEMIX302GB126HDS_10 PDF预览

SEMIX302GB126HDS_10

更新时间: 2024-10-28 09:29:23
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 315K
描述
Trench IGBT Modules

SEMIX302GB126HDS_10 数据手册

 浏览型号SEMIX302GB126HDS_10的Datasheet PDF文件第2页浏览型号SEMIX302GB126HDS_10的Datasheet PDF文件第3页浏览型号SEMIX302GB126HDS_10的Datasheet PDF文件第4页浏览型号SEMIX302GB126HDS_10的Datasheet PDF文件第5页 
SEMiX302GB126HDs  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
311  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 150 °C  
218  
ICnom  
ICRM  
VGES  
200  
ICRM = 2xICnom  
400  
-20 ... 20  
SEMiX® 2s  
VCC = 600 V  
VGE 20 V  
VCES 1200 V  
Tj = 125 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 150  
Trench IGBT Modules  
SEMiX302GB126HDs  
Features  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
292  
202  
A
A
Tj = 150 °C  
IFnom  
IFRM  
IFSM  
Tj  
200  
A
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
400  
A
1300  
A
• Homogeneous Si  
-40 ... 150  
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognised file no. E63532  
Module  
It(RMS)  
Tstg  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications*  
• AC inverter drives  
• UPS  
• Electronic Welding  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
Remarks  
• Case temperatur limited to TC=125°C  
max.  
IC = 200 A  
VCE(sat)  
Tj = 25 °C  
1.7  
2
2.1  
V
V
V
GE = 15 V  
Tj = 125 °C  
2.45  
chiplevel  
• Not for new design  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
VCE0  
rCE  
1
1.2  
1.1  
4.5  
6.8  
6.5  
0.3  
V
V
0.9  
3.5  
5.5  
5.8  
0.1  
mΩ  
mΩ  
V
VGE = 15 V  
VGE(th)  
ICES  
VGE=VCE, IC = 8 mA  
VGE = 0 V  
5
Tj = 25 °C  
Tj = 125 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
mA  
mA  
nF  
nF  
nF  
nC  
V
CE = 1200 V  
Cies  
Coes  
Cres  
QG  
14.4  
0.75  
0.65  
1600  
3.75  
320  
50  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
IC = 200 A  
RGint  
td(on)  
tr  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
ns  
ns  
Eon  
td(off)  
tf  
30  
mJ  
ns  
RG on = 2.8 Ω  
600  
100  
R
G off = 2.8 Ω  
ns  
Tj = 125 °C  
Eoff  
26  
mJ  
Rth(j-c)  
per IGBT  
0.12  
K/W  
GB  
© by SEMIKRON  
Rev. 0 – 16.04.2010  
1

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High short circuit capability