SEMiX302GB126HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
311
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 150 °C
218
ICnom
ICRM
VGES
200
ICRM = 2xICnom
400
-20 ... 20
SEMiX® 2s
VCC = 600 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-40 ... 150
Trench IGBT Modules
SEMiX302GB126HDs
Features
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
292
202
A
A
Tj = 150 °C
IFnom
IFRM
IFSM
Tj
200
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
400
A
1300
A
• Homogeneous Si
-40 ... 150
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperatur limited to TC=125°C
max.
IC = 200 A
VCE(sat)
Tj = 25 °C
1.7
2
2.1
V
V
V
GE = 15 V
Tj = 125 °C
2.45
chiplevel
• Not for new design
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VCE0
rCE
1
1.2
1.1
4.5
6.8
6.5
0.3
V
V
0.9
3.5
5.5
5.8
0.1
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 8 mA
VGE = 0 V
5
Tj = 25 °C
Tj = 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
mA
mA
nF
nF
nF
nC
Ω
V
CE = 1200 V
Cies
Coes
Cres
QG
14.4
0.75
0.65
1600
3.75
320
50
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 200 A
RGint
td(on)
tr
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
ns
ns
Eon
td(off)
tf
30
mJ
ns
RG on = 2.8 Ω
600
100
R
G off = 2.8 Ω
ns
Tj = 125 °C
Eoff
26
mJ
Rth(j-c)
per IGBT
0.12
K/W
GB
© by SEMIKRON
Rev. 0 – 16.04.2010
1