Datasheet > SEMiX303GB12E4I50p

SEMiX303GB12E4I50p

更新时间： 2023-12-06 20:08:27

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	649K
描述
IGBT Modules SEMiX 3p shunt (150x62x17)

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中文翻译

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数据手册

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SEMiX303GB12E4I50p

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

469

361

300

900

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3 x I_Cnom

V_CC= 800 V

-20 ... 20

SEMiX^®3p shunt

Trench IGBT Modules

SEMiX303GB12E4I50p

Features*

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1200

378

284

300

600

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• Homogeneous Si

1485

-40 ... 175

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• Press-fit pins as auxiliary contacts

• Current sensing shunt resistor

• UL recognized, file no. E63532

Module

I_t(RMS)

T_stg

T_c= 80°C

module without TIM

AC sinus 50Hz, t = 1 min

600

-40 ... 125

4000

°C

V_isol

Typical Applications

Characteristics

• AC inverter drives

• UPS

Symbol Conditions

IGBT

min.

typ.

max.

Unit

• Renewable energy systems

I_C= 300 A

T_j= 25 °C

V_CE(sat)

1.80

2.20

2.05

2.40

Remarks

_GE= 15 V

T_j= 150 °C

• Product reliability results are valid for

T_j=150°C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

3.3

5.0

5.8

0.9

0.8

3.8

5.3

6.5

4.0

mΩ

• V_isolbetween temperature sensor and

power section is only 2500V

• For storage and case temperature with

TIM see document “TP(*) SEMiX 3p”

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE= V_CE, I_C= 11.4 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

18.5

1.22

1.04

1695

2.5

165

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 300 A

_GE= +15/-15 V

E_on

t_d(off)

t_f

_{G on}= 1 Ω

_{G off}= 1 Ω

440

110

di/dt_on= 6200 A/µs

di/dt_off= 2400 A/µs

dv/dt = 3400 V/µs

L_s= 21 nH

T_j= 150 °C

E_off

R_th(j-c)

R_th(c-s)

per IGBT

per IGBT (λ_grease=0.81 W/(m*K))

0.094

K/W

0.03

per IGBT, pre-applied phase change

material

R_th(c-s)

0.021

K/W

GB + shunt

Rev. 1.0 – 02.03.2020

12 3 4 5 6

中文翻译

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