Datasheet > RN2708JE(TE85L,F)

RN2708JE(TE85L,F)

更新时间： 2024-09-15 20:04:35

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	334K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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技术参数
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RN2708JE(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.78	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2708JE(TE85L,F) 数据手册

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RN2707JE~RN2709JE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2707JE, RN2708JE, RN2709JE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

A wide range of resistor values are available for use in various circuit

designs.

Complementary to RN1707JE to RN1709JE

Equivalent Circuit and Bias Resistor Values

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

Type No.

R1 (kΩ)

R2 (kΩ)

RN2707JE

RN2708JE

RN2709JE

JEDEC

JEITA

―

TOSHIBA

2-2P1D

Weight: 3 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

Equivalent Circuit

(top view)

−50

CBO

RN2707JE

to 2709JE

Collector-emitter voltage

CEO

RN2707JE

RN2708JE

RN2709JE

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN2707JE

to 2709JE

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Start of commercial production

2000-06

2014-03-01

12 3 4 5 6

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与RN2708JE(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2708TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2708TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2709	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2709(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN2709(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN2709JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2709JE(TE85L)	TOSHIBA	获取价格	RN2709JE(TE85L)
RN2709JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2709JE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN2709TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

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