Datasheet > RN2108F(F)

RN2108F(F)

更新时间： 2024-02-28 05:30:57

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	326K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

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中文翻译

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技术参数
数据手册

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RN2108F(F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	1
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2108F(F) 数据手册

RN2107F∼RN2109F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107F,RN2108F,RN2109F

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1107F~RN1109F

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107F

RN2108F

RN2109F

JEDEC

JEITA

⎯

TOSHIBA

2-2HA1A

Weight: 2.3 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2107F

~RN2109F

Collector-emitter voltage

RN2107F

RN2108F

RN2109F

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2107F

~RN2109F

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6

中文翻译

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与RN2108F(F)相关器件

型号	品牌	获取价格	描述	数据表
RN2108F(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108F(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108F(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General
RN2108FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN2108MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2108MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2108MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA -50volts 3Pin 22K x 47Kohms
RN2109	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2109(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp

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