生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
最大集电极电流 (IC): | 0.05 A | 最小直流电流增益 (hFE): | 60 |
元件数量: | 2 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.05 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1962FE | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transi | |
RN1962FE(TE85L) | TOSHIBA |
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RN1962FE(TE85L) | |
RN1962FE(TE85L,F) | TOSHIBA |
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP | |
RN1962FE(TPL3) | TOSHIBA |
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP | |
RN1962FE(TPL3,F) | TOSHIBA |
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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP | |
RN1962FS | TOSHIBA |
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Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN1962TE85L | TOSHIBA |
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TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose | |
RN1962TE85R | TOSHIBA |
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TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose | |
RN1963 | TOSHIBA |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |
RN1963(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, |