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RN1964CT(TE85L) PDF预览

RN1964CT(TE85L)

更新时间： 2024-11-15 19:52:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 191K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

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中文翻译

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RN1964CT(TE85L) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.8
最大集电极电流 (IC)：0.05 A最小直流电流增益 (hFE)：120
元件数量：2极性/信道类型：NPN
最大功率耗散 (Abs)：0.05 W子类别：BIP General Purpose Small Signal
表面贴装：YES晶体管元件材料：SILICON
Base Number Matches：1

RN1964CT(TE85L) 数据手册

 浏览型号RN1964CT(TE85L)的Datasheet PDF文件第2页浏览型号RN1964CT(TE85L)的Datasheet PDF文件第3页浏览型号RN1964CT(TE85L)的Datasheet PDF文件第4页浏览型号RN1964CT(TE85L)的Datasheet PDF文件第5页浏览型号RN1964CT(TE85L)的Datasheet PDF文件第6页浏览型号RN1964CT(TE85L)的Datasheet PDF文件第7页 
RN1961CT~RN1966CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1961CT,RN1962CT,RN1963CT  
RN1964CT,RN1965CT,RN1966CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
1.0±0.05  
0.15±0.03  
Interface Circuit Applications  
Driver Circuit Applications  
６
１
５
２
４
３
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
0.35±0.02  
0.35±0.02  
0.075±0.03  
0.7±0.03  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
•
Complementary to RN2961CT to RN2966CT  
Equivalent Circuit and Bias Resistor Values  
(E1)  
1.EMITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
6.COLLECTOR１  
CST6  
RN1961CT  
RN1962CT  
RN1963CT  
RN1964CT  
RN1965CT  
RN1966CT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
JEDEC  
JEITA  
―
―
22  
47  
TOSHIBA  
2-1K1A  
E
2.2  
4.7  
Weight: 1 mg (typ.)  
Equivalent Circuit  
(top view)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
20  
20  
V
V
CBO  
CEO  
RN1961CT  
to 1966CT  
Q2  
Q1  
Collector-emitter voltage  
RN1961CT  
to 1964CT  
10  
5
1
2
3
V
V
EBO  
Emitter-base voltage  
RN1965CT,  
1966CT  
Collector current  
I
50  
50  
mA  
mW  
°C  
C
RN1961CT  
to  
RN1966CT  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note1)  
C
T
150  
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: Total rating  
1
2009-04-14  
12345678

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