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RN1964FE(TE85L,F) PDF预览

RN1964FE(TE85L,F)

更新时间： 2024-11-16 08:57:07
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 544K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

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RN1964FE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.83最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：80元件数量：2
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICON

RN1964FE(TE85L,F) 数据手册

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RN1961FE~RN1966FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1961FE,RN1962FE,RN1963FE  
RN1964FE,RN1965FE,RN1966FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
•
Complementary to RN2961FE to RN2966FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1961FE  
RN1962FE  
RN1963FE  
RN1964FE  
RN1965FE  
RN1966FE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
47  
JEDEC  
―
―
E
2.2  
4.7  
JEITA  
TOSHIBA  
Weight: 3mg (typ.)  
2-2N1A  
Equivalent Circuit  
(top view)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
6
5
4
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
V
Q2  
CBO  
RN1961FE  
to 1966FE  
Q1  
Collector-emitter voltage  
V
CEO  
RN1961FE  
to 1964FE  
10  
5
Emitter-base voltage  
V
V
1
2
3
EBO  
RN1965FE,  
1966FE  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
C
RN1961FE  
to 1966FE  
T
150  
j
T
stg  
−55 to150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2010-05-20  
12345678

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