Datasheet > RN1964FS(TPL3)

RN1964FS(TPL3)

更新时间： 2024-11-15 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	130K
描述
Digital Transistors Polarity=NPNx2 4.7K x 4.7Kohms

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中文翻译

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技术参数
数据手册

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RN1964FS(TPL3) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

RN1964FS(TPL3) 数据手册

RN1961FS~RN1966FS

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961FS,RN1962FS,RN1963FS

RN1964FS,RN1965FS,RN1966FS

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

1.0±0.05

0.8±0.05

0.1±0.05

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Complementary to RN2961FS~RN2966FS

Equivalent Circuit and Bias Resistor Values

(E1)

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

(E2)

(B2)

(C2)

(B1)

(C1)

Type No.

R1 (kΩ)

R2 (kΩ)

RN1961FS

RN1962FS

RN1963FS

RN1964FS

RN1965FS

RN1966FS

4.7

6.COLLECTOR1

fS6

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1F1C

Weight: 0.001 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1961FS~

1966FS

Collector-emitter voltage

RN1961FS~

1964FS

EBO

Emitter-base voltage

RN1965FS,

1966FS

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN1961FS~

RN1966FS

150

stg

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6 7 8

中文翻译

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与RN1964FS(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1964TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1964TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1965	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1965(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,
RN1965(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363
RN1965(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,
RN1965CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1965CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1965FE	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transi
RN1965FE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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