RN1961FE~RN1966FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FE,RN1962FE,RN1963FE
RN1964FE,RN1965FE,RN1966FE
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
•
Complementary to RN2961FE to RN2966FE
Equivalent Circuit and Bias Resistor Values
C
Type No.
R1 (kΩ)
R2 (kΩ)
RN1961FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
4.7
10
4.7
10
22
47
47
47
R1
B
22
47
JEDEC
―
―
E
2.2
4.7
JEITA
TOSHIBA
Weight: 3mg (typ.)
2-2N1A
Equivalent Circuit
(top view)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
6
5
4
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
50
50
V
V
Q2
CBO
RN1961FE
to 1966FE
Q1
Collector-emitter voltage
V
CEO
RN1961FE
to 1964FE
10
5
Emitter-base voltage
V
V
1
2
3
EBO
RN1965FE,
1966FE
Collector current
I
100
100
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
(Note 1)
C
RN1961FE
to 1966FE
T
150
j
T
stg
−55 to150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2010-05-20