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RN1962FS PDF预览

RN1962FS

更新时间： 2024-02-22 18:01:06
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
8页 137K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1962FS 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.47其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.05 A集电极-发射极最大电压：20 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-F6JESD-609代码：e0
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.05 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN1962FS 数据手册

 浏览型号RN1962FS的Datasheet PDF文件第2页浏览型号RN1962FS的Datasheet PDF文件第3页浏览型号RN1962FS的Datasheet PDF文件第4页浏览型号RN1962FS的Datasheet PDF文件第5页浏览型号RN1962FS的Datasheet PDF文件第6页浏览型号RN1962FS的Datasheet PDF文件第7页 
RN1961FS~RN1966FS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1961FS,RN1962FS,RN1963FS  
RN1964FS,RN1965FS,RN1966FS  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
1.0±0.05  
0.8±0.05  
0.1±0.05  
0.1±0.05  
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package.  
1
6
5
Incorporating a bias resistor into a transistor reduces parts count.  
2
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
4
3
•
Complementary to RN2961FS~RN2966FS  
Equivalent Circuit and Bias Resistor Values  
(E1)  
1.EMIITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
C
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1961FS  
RN1962FS  
RN1963FS  
RN1964FS  
RN1965FS  
RN1966FS  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
6.COLLECTOR1  
fS6  
B
22  
JEDEC  
JEITA  
―
47  
E
―
2.2  
4.7  
TOSHIBA  
2-1F1C  
Weight: 0.001 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
20  
20  
V
V
CBO  
CEO  
RN1961FS~  
1966FS  
Q2  
Q1  
Collector-emitter voltage  
RN1961FS~  
1964FS  
10  
5
V
V
C
EBO  
Emitter-base voltage  
RN1965FS,  
1966FS  
1
2
3
Collector current  
I
50  
50  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
RN1961FS~  
RN1966FS  
T
j
150  
T
stg  
−55~150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2007-11-01  
12345678

中文翻译

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