Datasheet > RN1964(TE85L,F)

RN1964(TE85L,F)

更新时间： 2023-02-26 15:10:39

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	468K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363

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中文翻译

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技术参数
数据手册

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RN1964(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1964(TE85L,F) 数据手册

RN1961~RN1966

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1961,RN1962,RN1963

RN1964,RN1965,RN1966

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in US6 (ultra super mini type 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2961 to RN2966

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1961

RN1962

RN1963

RN1964

RN1965

RN1966

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-2J1B

Weight: 6.8 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1961 to 1966

Collector-emitter voltage

RN1961 to 1964

RN1965, 1966

Emitter-base voltage

EBO

Collector current

100

Collector power dissipation

Junction temperature

P *

200

150

°C

RN1961 to 1966

Storage temperature range

stg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit (Top View)

2010-05-20

12 3 4 5 6 7

中文翻译

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与RN1964(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1964CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1964CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1964FE	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transi
RN1964FE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1964FE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1964FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1964FS(TPL3)	TOSHIBA	获取价格	Digital Transistors Polarity=NPNx2 4.7K x 4.7Kohms
RN1964TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1964TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1965	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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