RN1961FS~RN1966FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FS,RN1962FS,RN1963FS
RN1964FS,RN1965FS,RN1966FS
Switching, Inverter Circuit, Interface Circuit and
Unit: mm
Driver Circuit Applications
1.0±0.05
0.8±0.05
0.1±0.05
0.1±0.05
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
1
6
5
Incorporating a bias resistor into a transistor reduces parts count.
2
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
4
3
•
Complementary to RN2961FS~RN2966FS
Equivalent Circuit and Bias Resistor Values
(E1)
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
C
(E2)
(B2)
(C2)
(B1)
(C1)
Type No.
R1 (kΩ)
R2 (kΩ)
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
4.7
10
4.7
10
22
47
47
47
R1
6.COLLECTOR1
fS6
B
22
JEDEC
JEITA
―
47
E
―
2.2
4.7
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
(top view)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
6
5
4
V
V
20
20
V
V
CBO
CEO
RN1961FS~
1966FS
Q2
Q1
Collector-emitter voltage
RN1961FS~
1964FS
10
5
V
V
C
EBO
Emitter-base voltage
RN1965FS,
1966FS
1
2
3
Collector current
I
50
50
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
(Note 1)
RN1961FS~
RN1966FS
T
j
150
T
stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01