5秒后页面跳转
RN1963FE PDF预览

RN1963FE

更新时间: 2024-01-01 01:18:08
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
4页 89K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1963FE 技术参数

生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.48Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-F6
JESD-609代码:e0元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN1963FE 数据手册

 浏览型号RN1963FE的Datasheet PDF文件第2页浏览型号RN1963FE的Datasheet PDF文件第3页浏览型号RN1963FE的Datasheet PDF文件第4页 
                                                        
                                                        
RN1961FE~RN1966FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1961FE,RN1962FE,RN1963FE  
RN1964FE,RN1965FE,RN1966FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications.  
·
·
Two devices are incorporated into an Extreme-Super-Mini (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Complementary to RN2961FE~RN2966FE  
·
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kW)  
R2 (kW)  
RN1961FE  
RN1962FE  
RN1963FE  
RN1964FE  
RN1965FE  
RN1966FE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
47  
JEDEC  
JEITA  
E
2.2  
4.7  
TOSHIBA  
Weight:  
g (typ.)  
Equivalent Circuit  
(top view)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
50  
50  
V
V
CBO  
CEO  
RN1961FE~  
1966FE  
Q2  
Collector-emitter voltage  
Q1  
RN1961FE~  
1964FE  
10  
5
Emitter-base voltage  
V
V
EBO  
RN1965FE,  
1966FE  
1
2
3
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note)  
C
T
RN1961FE~  
RN1966FE  
150  
j
T
-55~150  
°C  
stg  
Note: Total rating  
1
2002-01-29  

与RN1963FE相关器件

型号 品牌 描述 获取价格 数据表
RN1963FE(TE85L,F) TOSHIBA PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

获取价格

RN1963FE(TPL3,F) TOSHIBA PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

获取价格

RN1963FS TOSHIBA Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

获取价格

RN1963FS(TPL3) TOSHIBA Digital Transistors 50mA 20volts 6Pin 22K x 22Kohms

获取价格

RN1963TE85L TOSHIBA TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

获取价格

RN1963TE85N TOSHIBA TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

获取价格