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RN1101(TE85L)

更新时间： 2024-09-24 19:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 561K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purpose Small Signal

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中文翻译

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RN1101(TE85L) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.43Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：30JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

RN1101(TE85L) 数据手册

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RN1101∼RN1106  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101, RN1102, RN1103,  
RN1104, RN1105, RN1106  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z With built-in bias resistors  
z Simplified circuit design  
z Reduced number of parts and simplified manufacturing process  
z Complementary to RN2101~ RN2106  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1101  
RN1102  
RN1103  
RN1104  
RN1105  
RN1106  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
―
―
JEITA  
TOSHIBA  
2-2H1A  
Weight: 2.4 mg (typ).  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101~1106  
Collector-emitter voltage  
RN1101~1104  
RN1105, 1106  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
100  
150  
−55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1101~1106  
T
j
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  
12345678

中文翻译

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RN1101(TE85L) 替代型号

型号 品牌 替代类型 描述 数据表
RN1101MFV TOSHIBA

类似代替

 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1201 TOSHIBA

类似代替

 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101 TOSHIBA

类似代替

 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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