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RN1101CT PDF预览

RN1101CT

更新时间： 2024-11-21 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器开关小信号双极晶体管
页数 文件大小 规格书
8页 173K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

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RN1101CT 技术参数

生命周期：Lifetime Buy包装说明：CHIP CARRIER, R-XBCC-N3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.7其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接：COLLECTOR最大集电极电流 (IC)：0.05 A
集电极-发射极最大电压：20 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：30JESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN1101CT 数据手册

 浏览型号RN1101CT的Datasheet PDF文件第2页浏览型号RN1101CT的Datasheet PDF文件第3页浏览型号RN1101CT的Datasheet PDF文件第4页浏览型号RN1101CT的Datasheet PDF文件第5页浏览型号RN1101CT的Datasheet PDF文件第6页浏览型号RN1101CT的Datasheet PDF文件第7页 
RN1101CT ~ RN1106CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1101CT,RN1102CT,RN1103CT  
RN1104CT,RN1105CT,RN1106CT  
Switching Applications  
Unit: mm  
0.6±0.05  
Inverter Circuit Applications  
0.5±0.03  
Interface Circuit Applications  
Driver Circuit Applications  
３
•
•
Incorporating a bias resistor into a transistor reduces parts count.  
１
２
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Complementary to RN2101CT to RN2106CT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
1.BASE  
RN1101CT  
RN1102CT  
RN1103CT  
RN1104CT  
RN1105CT  
RN1106CT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
2. EMITTER  
R1  
CST3  
B
3, COLLECTOR  
22  
JEDEC  
JEITA  
―
―
47  
E
2.2  
4.7  
TOSHIBA  
2-1J1A  
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
20  
V
V
CBO  
CEO  
RN1101CT to 1106CT  
Collector-emitter voltage  
Emitter-base voltage  
20  
RN1101CT to 1104CT  
RN1105CT, 1106CT  
10  
V
V
EBO  
5
50  
Collector current  
I
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
RN1101CT ro 1106CT  
T
j
150  
T
−55 to 150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-13  
12345678

中文翻译

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与RN1101CT相关器件

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RN1101CT(TPL3) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT
RN1101F TOSHIBA

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RN1101F_07 TOSHIBA

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RN1101FS TOSHIBA

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RN1101FS(TPL3) TOSHIBA

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 		Digital Transistors 50mA 20volts 3Pin 4.7K x 4.7Kohms
RN1101FT TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1101FT(TE85L,F) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1101FV TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1101MFV TOSHIBA

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 		Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1101MFV(TL3MAA) TOSHIBA

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 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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