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RN1102MFV PDF预览

RN1102MFV

更新时间: 2024-09-26 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
8页 205K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1102MFV 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.44Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RN1102MFV 数据手册

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RN1101MFVRN1106MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101MFV,RN1102MFV,RN1103MFV  
RN1104MFV,RN1105MFV,RN1106MFV  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Ultra-small package, suited to very high density mounting  
1.2 ± 0.05  
Incorporating a bias resistor into the transistor reduces the number of parts,  
so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
0.80 ± 0.05  
1
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2101MFV~RN2106MFV  
Lead (Pb) - free  
3
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
1. BASE  
47  
2. EMITTER  
VESM  
3. COLLECTOR  
2.2  
4.7  
JEDEC  
JEITA  
2-1L1A  
TOSHIBA  
Weight: 0.0015 g (typ.)  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101MFV~1106MFV  
RN1101MFV~1104MFV  
RN1105MFV, 1106MFV  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
150  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note)  
C
RN1101MFV~1106MFV  
T
j
T
stg  
°C  
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
0.5  
0.45  
1.15  
0.4  
0.45  
0.4  
0.4  
2005-03-30  
1

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