Datasheet > RN1103(TE85L,F)

RN1103(TE85L,F)

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	566K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

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数据手册

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RN1103(TE85L,F) 数据手册

RN1101∼RN1106

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101, RN1102, RN1103,

RN1104, RN1105, RN1106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors

z Simplified circuit design

z Reduced number of parts and simplified manufacturing process

z Complementary to RN2101~ RN2106

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101

RN1102

RN1103

RN1104

RN1105

RN1106

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ).

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1101~1106

Collector-emitter voltage

RN1101~1104

RN1105, 1106

Emitter-base voltage

EBO

Collector current

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1101~1106

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

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