Datasheet > RN1104MFV

RN1104MFV

更新时间： 2024-01-11 14:27:30

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
8页	205K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

获取价格

数据手册
替代型号

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RN1104MFV 数据手册

RN1101MFV∼RN1106MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101MFV,RN1102MFV,RN1103MFV

RN1104MFV,RN1105MFV,RN1106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

ꢀ

Ultra-small package, suited to very high density mounting

1.2 ± 0.05

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

0.80 ± 0.05

ꢀ

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2101MFV~RN2106MFV

Lead (Pb) - free

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101MFV

RN1102MFV

RN1103MFV

RN1104MFV

RN1105MFV

RN1106MFV

4.7

1. BASE

2. EMITTER

VESM

3. COLLECTOR

2.2

4.7

JEDEC

JEITA

―

2-1L1A

TOSHIBA

Weight: 0.0015 g (typ.)

Maximum Ratings

(Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

CBO

CEO

RN1101MFV~1106MFV

RN1101MFV~1104MFV

RN1105MFV, 1106MFV

Emitter-base voltage

EBO

Collector current

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note)

RN1101MFV~1106MFV

stg

°C

Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

0.5

0.45

1.15

0.4

0.45

0.4

2005-03-30

12 3 4 5 6 7 8

中文翻译

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RN1104MFV 替代型号

型号	品牌	替代类型	描述	数据表
RN1104MFV(TPL3)	TOSHIBA	类似代替	TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR, BIP General P

与RN1104MFV相关器件

型号	品牌	获取价格	描述	数据表
RN1104MFV(TL3,T)	TOSHIBA	获取价格	Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
RN1104MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1104MFV(TL3SAN)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1104MFV(TPL3)	TOSHIBA	获取价格	TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR, BIP General P
RN1105	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1105(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN1105(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN1105(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN1105ACT	TOSHIBA	获取价格	TRANSISTOR 80 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General
RN1105CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver