Datasheet > RN1104CT(TPL3)

RN1104CT(TPL3)

更新时间： 2024-11-21 20:11:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	174K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT

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中文翻译

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技术参数
数据手册

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RN1104CT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.05 A	最小直流电流增益 (hFE)：	120
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.05 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1104CT(TPL3) 数据手册

RN1101CT ~ RN1106CT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1101CT, RN1102CT, RN1103CT

RN1104CT, RN1105CT, RN1106CT

Switching Applications

Unit: mm

0.6±0.05

Inverter Circuit Applications

0.5±0.03

Interface Circuit Applications

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces parts count.

１

２

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Complementary to RN2101CT to RN2106CT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

RN1101CT

RN1102CT

RN1103CT

RN1104CT

RN1105CT

RN1106CT

4.7

2. EMITTER

CST3

3, COLLECTOR

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101CT to 1106CT

Collector-emitter voltage

Emitter-base voltage

RN1101CT to 1104CT

RN1105CT, 1106CT

EBO

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1101CT ro 1106CT

150

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-10

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN1104CT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1104F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1104FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General
RN1104FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1104FT(TE85L)	TOSHIBA	获取价格	RN1104FT(TE85L)
RN1104FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1104MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1104MFV(TL3,T)	TOSHIBA	获取价格	Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R
RN1104MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1104MFV(TL3SAN)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1104MFV(TPL3)	TOSHIBA	获取价格	TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR, BIP General P

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