Datasheet > RN1104F

RN1104F

更新时间： 2024-11-02 04:07:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
8页	573K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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中文翻译

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数据手册

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RN1104F 数据手册

RN1101F∼RN1106F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101F,RN1102F,RN1103F

RN1104F,RN1105F,RN1106F

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit in mm

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2101F~RN2106F

Equivalent Circuit And Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101F

RN1102F

RN1103F

RN1104F

RN1105F

RN1106F

4.7

2.2

4.7

JEDEC

―

EIAJ

2-2H1A

TOSHIBA

Weight: 2.3 mg

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1101F~1106F

Collector-emitter voltage

RN1101F~1104F

RN1105F, 1106F

Emitter-base voltage

EBO

Collector current

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1101F~1106F

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

中文翻译

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