Datasheet > RN1102MFV,L3F(T

RN1102MFV,L3F(T

更新时间： 2024-02-09 03:37:12

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	847K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN1102MFV,L3F(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

RN1102MFV,L3F(T 数据手册

RN1101MFV to RN1106MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1101MFV, RN1102MFV, RN1103MFV

RN1104MFV, RN1105MFV, RN1106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

 Ultra-small package, suited to very high density mounting

 Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.

 A wide range of resistor values is available for use in various circuits.

 Complementary to the RN2101MFV to RN2106MFV

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101MFV

RN1102MFV

RN1103MFV

RN1104MFV

RN1105MFV

RN1106MFV

4.7

1.BASE

2.EMITTER

3.COLLECTOR

VESM

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

1-1Q1S

Absolute Maximum Ratings (Ta = 25°C)

Weight: 1.5 mg (typ.)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN1101MFV to 1106MFV

Collector-emitter voltage

CBO

CEO

RN1101MFV to 1104MFV

Emitter-base voltage

EBO

RN1105MFV, 1106MFV

Collector current

100

°C

Collector power dissipation

RN1101MFV to 1106MFV

Junction temperature

P (Note 1)

150

Storage temperature range

−55 to 150

°C

stg

Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

0.5

Land Pattern Dimensions

Unit: mm

(for reference only)

0.45

1.15

0.4

0.45

Start of commercial production

2005-02

0.4

Toshiba Electronic Devices & Storage Corporation

2018-12-21

12 3 4 5 6 7 8

中文翻译

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与RN1102MFV,L3F(T相关器件

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RN1102MFVTPL3	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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RN1103(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN1103ACT	TOSHIBA	获取价格	TRANSISTOR 80 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General
RN1103ACT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SOT-883
RN1103CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1103F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1103FT(TE85L)	TOSHIBA	获取价格	RN1103FT(TE85L)
RN1103FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1103MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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