Datasheet > RN1102ACT(TPL3)

RN1102ACT(TPL3)

更新时间： 2024-11-21 19:54:35

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	176K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SOT-883

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中文翻译

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技术参数
数据手册

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RN1102ACT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
最大集电极电流 (IC)：	0.08 A	最小直流电流增益 (hFE)：	50
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.1 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1102ACT(TPL3) 数据手册

RN1101ACT ~ RN1106ACT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1101ACT, RN1102ACT, RN1103ACT

RN1104ACT, RN1105ACT, RN1106ACT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

0.5±0.03

Interface Circuit Applications

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

１

２

Complementary to RN2101ACT to RN2106ACT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

RN1101ACT

RN1102ACT

RN1103ACT

RN1104ACT

RN1105ACT

RN1106ACT

4.7

2. EMITTER

CST3

3.COLLECTOR

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101ACT to 1106ACT

Collector-emitter voltage

RN1101ACT to 1104ACT

Emitter-base voltage

EBO

RN1105ACT, 1106ACT

Collector current

°C

Collector power dissipation

RN1101ACT to 1106ACT

Junction temperature

(Note1)

100

150

Storage temperature range

stg

−55 to 150

°C

Note1: Mounted on FR4 board (10 mm × 10 mm × 1 mm)

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-08

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN1102ACT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1102CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1102F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1102FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General
RN1102FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1102FT(TE85L)	TOSHIBA	获取价格	RN1102FT(TE85L)
RN1102FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1102FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1102MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1102MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1102MFV(TL3SAN)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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