RN1102CT

更新时间： 2024-11-01 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关
页数	文件大小	规格书
8页	173K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

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技术参数
数据手册

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RN1102CT 技术参数

生命周期：	Lifetime Buy	包装说明：	CHIP CARRIER, R-XBCC-N3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.7	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.05 A
集电极-发射极最大电压：	20 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	60	JESD-30 代码：	R-XBCC-N3
元件数量：	1	端子数量：	3
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1102CT 数据手册

RN1101CT ~ RN1106CT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1101CT,RN1102CT,RN1103CT

RN1104CT,RN1105CT,RN1106CT

Switching Applications

Unit: mm

0.6±0.05

Inverter Circuit Applications

0.5±0.03

Interface Circuit Applications

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces parts count.

１

２

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Complementary to RN2101CT to RN2106CT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

RN1101CT

RN1102CT

RN1103CT

RN1104CT

RN1105CT

RN1106CT

4.7

2. EMITTER

CST3

3, COLLECTOR

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101CT to 1106CT

Collector-emitter voltage

Emitter-base voltage

RN1101CT to 1104CT

RN1105CT, 1106CT

EBO

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1101CT ro 1106CT

150

−55 to 150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-13

12 3 4 5 6 7 8

中文翻译

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与RN1102CT相关器件

型号	品牌	获取价格	描述	数据表
RN1102F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1102FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General
RN1102FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1102FT(TE85L)	TOSHIBA	获取价格	RN1102FT(TE85L)
RN1102FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1102FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN1102MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1102MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1102MFV(TL3SAN)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1102MFV,L3F(T	TOSHIBA	获取价格	Small Signal Bipolar Transistor

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