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RN1101FT

更新时间： 2024-11-01 13:12:59
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
7页 309K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal

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RN1101FT 技术参数

生命周期：Obsolete包装说明：2-1B1A, TESM, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.68Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：30JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

RN1101FT 数据手册

 浏览型号RN1101FT的Datasheet PDF文件第2页浏览型号RN1101FT的Datasheet PDF文件第3页浏览型号RN1101FT的Datasheet PDF文件第4页浏览型号RN1101FT的Datasheet PDF文件第5页浏览型号RN1101FT的Datasheet PDF文件第6页浏览型号RN1101FT的Datasheet PDF文件第7页 
RN1101F~RN1106F  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101F,RN1102F,RN1103F  
RN1104F,RN1105F,RN1106F  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit in mm  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2101F~RN2106F  
Equivalent Circuit And Bias Resister Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1101F  
RN1102F  
RN1103F  
RN1104F  
RN1105F  
RN1106F  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
―
―
2-2H1A  
TOSHIBA  
Weight: 2.3 mg  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101F~1106F  
Collector-emitter voltage  
RN1101F~1104F  
RN1105F, 1106F  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
100  
150  
−55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1101F~1106F  
T
j
T
°C  
stg  
000707EAA2  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
2001-02-08 1/7  
1234567

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RN1102 TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN1102(TE85L,F) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

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