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RN1101MFV PDF预览

RN1101MFV

更新时间: 2024-09-25 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
8页 205K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1101MFV 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.44
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RN1101MFV 数据手册

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RN1101MFVRN1106MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101MFV,RN1102MFV,RN1103MFV  
RN1104MFV,RN1105MFV,RN1106MFV  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Ultra-small package, suited to very high density mounting  
1.2 ± 0.05  
Incorporating a bias resistor into the transistor reduces the number of parts,  
so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
0.80 ± 0.05  
1
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2101MFV~RN2106MFV  
Lead (Pb) - free  
3
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
1. BASE  
47  
2. EMITTER  
VESM  
3. COLLECTOR  
2.2  
4.7  
JEDEC  
JEITA  
2-1L1A  
TOSHIBA  
Weight: 0.0015 g (typ.)  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101MFV~1106MFV  
RN1101MFV~1104MFV  
RN1105MFV, 1106MFV  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
150  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note)  
C
RN1101MFV~1106MFV  
T
j
T
stg  
°C  
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
0.5  
0.45  
1.15  
0.4  
0.45  
0.4  
0.4  
2005-03-30  
1

RN1101MFV 替代型号

型号 品牌 替代类型 描述 数据表
RN1201 TOSHIBA

类似代替

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101 TOSHIBA

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Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1001 TOSHIBA

类似代替

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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