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RN1101FT(TE85L,F)

更新时间： 2024-11-21 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 624K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

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中文翻译

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RN1101FT(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：30元件数量：1
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN1101FT(TE85L,F) 数据手册

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RN1101FT~RN1106FT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1101FT, RN1102FT, RN1103FT  
RN1104FT, RN1105FT, RN1106FT  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
•
•
High-density mount is possible because of devices housed in very thin  
TESM packages.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more compact  
equipment and save assembly cost.  
•
•
Wide range of resistor values are available to use in various circuit  
designs.  
Complementary to RN2101FT to RN2106FT  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1101FT  
RN1102FT  
RN1103FT  
RN1104FT  
RN1105FT  
RN1106FT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
JEDEC  
JEITA  
―
―
22  
47  
E
TOSHIBA  
2-1B1A  
2.2  
4.7  
Weight:2.2 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
RN1101FT to 1106FT  
Collector-emitter voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101FT to 1104FT  
Emitter-base voltage  
10  
V
V
EBO  
RN1105FT, RN1106FT  
5
Collector current  
I
100  
100  
150  
mA  
mW  
°C  
C
Collector power dissipation  
RN1101FT to 1106FT  
Junction temperature  
P
C
T
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2010-03-07  
12345678

中文翻译

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