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RN1101MFV(TL3PAV) PDF预览

RN1101MFV(TL3PAV)

更新时间： 2024-11-01 20:04:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 1034K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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RN1101MFV(TL3PAV) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.7
Is Samacsys：N其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN1101MFV(TL3PAV) 数据手册

 浏览型号RN1101MFV(TL3PAV)的Datasheet PDF文件第2页浏览型号RN1101MFV(TL3PAV)的Datasheet PDF文件第3页浏览型号RN1101MFV(TL3PAV)的Datasheet PDF文件第4页浏览型号RN1101MFV(TL3PAV)的Datasheet PDF文件第5页浏览型号RN1101MFV(TL3PAV)的Datasheet PDF文件第6页浏览型号RN1101MFV(TL3PAV)的Datasheet PDF文件第7页 
RN1101MFV∼RN1106MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101MFV, RN1102MFV, RN1103MFV  
RN1104MFV, RN1105MFV, RN1106MFV  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
1.2 ± 0.05  
z Ultra-small package, suited to very high density mounting  
0.80 ± 0.05  
z Incorporating a bias resistor into the transistor reduces the number of parts,  
so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
1
z A wide range of resistor values is available for use in various circuits.  
z Complementary to the RN2101MFV to RN2106MFV  
3
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
1. BASE  
47  
2. EMITTER  
3. COLLECTOR  
2.2  
4.7  
VESM  
JEDEC  
JEITA  
―
―
2-1L1A  
TOSHIBA  
Weight: 1.5 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101MFV to 1106MFV  
Collector-emitter voltage  
RN1101MFV to 1104MFV  
Emitter-base voltage  
10  
V
V
EBO  
RN1105MFV, 1106MFV  
5
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
RN1101MFV to 1106MFV  
Junction temperature  
P (Note 1)  
150  
C
T
150  
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)  
0.5  
Pad Dimension（Reference）  
Unit: mm  
0.45  
1.15  
0.4  
0.45  
Start of commercial production  
2005-02  
0.4  
0.4  
1
2014-03-01  
12345678

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