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RN1101ACT(TPL3)

更新时间： 2024-09-24 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 176K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SOT-883

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中文翻译

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RN1101ACT(TPL3) 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.83
Is Samacsys：N最大集电极电流 (IC)：0.08 A
最小直流电流增益 (hFE)：30元件数量：1
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN1101ACT(TPL3) 数据手册

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RN1101ACT ~ RN1106ACT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1101ACT, RN1102ACT, RN1103ACT  
RN1104ACT, RN1105ACT, RN1106ACT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
0.6±0.05  
0.5±0.03  
Interface Circuit Applications  
Driver Circuit Applications  
３
•
•
Incorporating a bias resistor into a transistor reduces the number of parts,  
which enables the manufacture of ever more compact equipment and  
saves assembly cost.  
１
２
Complementary to RN2101ACT to RN2106ACT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
1.BASE  
RN1101ACT  
RN1102ACT  
RN1103ACT  
RN1104ACT  
RN1105ACT  
RN1106ACT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
2. EMITTER  
B
CST3  
3.COLLECTOR  
22  
JEDEC  
JEITA  
―
―
47  
E
2.2  
4.7  
TOSHIBA  
2-1J1A  
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
50  
V
V
CBO  
CEO  
RN1101ACT to 1106ACT  
Collector-emitter voltage  
50  
RN1101ACT to 1104ACT  
Emitter-base voltage  
10  
V
V
EBO  
RN1105ACT, 1106ACT  
5
80  
Collector current  
I
mA  
mW  
°C  
C
Collector power dissipation  
RN1101ACT to 1106ACT  
Junction temperature  
P
(Note1)  
100  
C
T
j
150  
Storage temperature range  
T
stg  
−55 to 150  
°C  
Note1: Mounted on FR4 board (10 mm × 10 mm × 1 mm)  
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2004-08  
1
2014-03-01  
12345678

中文翻译

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RN1101ACT(TPL3) 替代型号

型号 品牌 替代类型 描述 数据表
PDTC143EM,315 NXP

功能相似

 PDTC143E series - NPN resistor-equipped trans

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