RN1101ACT

更新时间： 2024-09-24 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
8页	175K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications

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数据手册

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RN1101ACT 数据手册

RN1101ACT ~ RN1106ACT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1101ACT,RN1102ACT,RN1103ACT

RN1104ACT,RN1105ACT,RN1106ACT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

0.5±0.03

Interface Circuit Applications

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

１

２

Complementary to RN2101ACT to RN2106ACT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

2. EMITTER

RN1101ACT

RN1102ACT

RN1103ACT

RN1104ACT

RN1105ACT

RN1106ACT

4.7

CST3

3.COLLECTOR

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101ACT to 1106ACT

Collector-emitter voltage

RN1101ACT to 1104ACT

Emitter-base voltage

EBO

RN1105ACT, 1106ACT

Collector current

°C

Collector power dissipation

RN1101ACT to 1106ACT

Junction temperature

(Note1)

100

150

Storage temperature range

stg

−55 to 150

°C

Note1: Mounted on FR4 board (10 mm × 10 mm × 1 mm)

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-11

12 3 4 5 6 7 8

中文翻译

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与RN1101ACT相关器件

型号	品牌	获取价格	描述	数据表
RN1101ACT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SOT-883
RN1101CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1101CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT
RN1101F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1101F_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1101FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP General
RN1101FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 50mA 20volts 3Pin 4.7K x 4.7Kohms
RN1101FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN1101FT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN1101FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera

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